公开(公告)号：US20220009842A1

公开(公告)日：2022-01-13

申请号：US17296172

申请日：2019-11-22

Applicant: DENKA COMPANY LIMITED

Inventor： Akimasa YUASA ,  Takahiro NAKAMURA ,  Shuhei MORITA ,  Koji NISHIMURA

IPC: C04B37/02 ,  H05K1/09 ,  H05K1/03 ,  B32B9/04 ,  B32B15/20 ,  B32B7/12

Abstract: A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer. When a region having a length of 1,700 μm in a long-side direction is a region P on a cut surface of the ceramic-copper composite obtained when the ceramic-copper composite is cut with a plane perpendicular to a main surface of the ceramic-copper composite, an average crystal grain size D1 of copper crystals at least partially present in a region P1 within 50 μm on a side of the copper layer from an interface between the ceramic layer and the brazing material layer in the region P is 30 μm or more and 100 μm or less.

公开(公告)号：US20210176859A1

公开(公告)日：2021-06-10

申请号：US16616837

申请日：2018-05-29

Applicant: DENKA COMPANY LIMITED

Inventor： Akimasa YUASA ,  Yusaku HARADA ,  Takahiro NAKAMURA ,  Shuhei MORITA ,  Kouji NISHIMURA

IPC: H05K1/03 ,  B32B9/04 ,  B32B15/04 ,  B32B15/20 ,  B23K1/00 ,  C04B37/02

Abstract: A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

公开(公告)号：US20200163210A1

公开(公告)日：2020-05-21

申请号：US16630232

申请日：2018-07-25

Applicant: DENKA COMPANY LIMITED

Inventor： Akimasa YUASA ,  Yusaku HARADA ,  Takahiro NAKAMURA ,  Shuhei MORITA ,  Kouji NISHIMURA

IPC: H05K1/03 ,  H05K3/10

Abstract: A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.