CERAMIC CIRCUIT BOARD AND PRODUCTION METHOD THEREFOR

    公开(公告)号:US20200163210A1

    公开(公告)日:2020-05-21

    申请号:US16630232

    申请日:2018-07-25

    Abstract: A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

    CERAMIC-COPPER COMPOSITE, CERAMIC CIRCUIT BOARD, POWER MODULE, AND METHOD OF PRODUCING CERAMIC-COPPER COMPOSITE

    公开(公告)号:US20220225498A1

    公开(公告)日:2022-07-14

    申请号:US17418888

    申请日:2019-12-26

    Abstract: A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer, in which a specified Expression (1) is satisfied in a cut surface of the copper layer obtained when the ceramic-copper composite is cut at a plane perpendicular to a main surface of the ceramic-copper composite, where S(102)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (102) plane is within 10°, S(101)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (101) plane is within 10°, S(111)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (111) plane is within 10°, and S(112)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (112) plane is within 10°.

    CERAMIC CIRCUIT BOARD AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20210176859A1

    公开(公告)日:2021-06-10

    申请号:US16616837

    申请日:2018-05-29

    Abstract: A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

    CERAMIC CIRCUIT SUBSTRATE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20190115228A1

    公开(公告)日:2019-04-18

    申请号:US16097131

    申请日:2017-04-25

    Abstract: [Problem] To obtain a ceramic circuit substrate for a power module wherein an insulating resin for preventing solder flow and chip displacement and an insulating resin for preventing partial discharges and lowering of insulation are applied, without lowering productivity or worsening partial discharge properties, or lowering the insulating properties due to positional displacement of the insulating resins. [Solution] A ceramic circuit substrate for a power module is obtained by applying an insulating resin for preventing solder flow and chip displacement and an insulating resin for preventing partial discharges and the lowering of insulation to a main surface of a metal circuit and to the outer periphery of the metal circuit or between metal circuits, respectively.

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