CERAMIC CIRCUIT BOARD AND PRODUCTION METHOD THEREFOR

    公开(公告)号:US20200163210A1

    公开(公告)日:2020-05-21

    申请号:US16630232

    申请日:2018-07-25

    Abstract: A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

    CERAMIC CIRCUIT SUBSTRATE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20190115228A1

    公开(公告)日:2019-04-18

    申请号:US16097131

    申请日:2017-04-25

    Abstract: [Problem] To obtain a ceramic circuit substrate for a power module wherein an insulating resin for preventing solder flow and chip displacement and an insulating resin for preventing partial discharges and lowering of insulation are applied, without lowering productivity or worsening partial discharge properties, or lowering the insulating properties due to positional displacement of the insulating resins. [Solution] A ceramic circuit substrate for a power module is obtained by applying an insulating resin for preventing solder flow and chip displacement and an insulating resin for preventing partial discharges and the lowering of insulation to a main surface of a metal circuit and to the outer periphery of the metal circuit or between metal circuits, respectively.

    CERAMIC CIRCUIT BOARD AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20210176859A1

    公开(公告)日:2021-06-10

    申请号:US16616837

    申请日:2018-05-29

    Abstract: A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

    CERAMIC CIRCUIT SUBSTRATE
    5.
    发明申请

    公开(公告)号:US20200185320A1

    公开(公告)日:2020-06-11

    申请号:US16619414

    申请日:2018-06-07

    Abstract: A ceramic circuit substrate is suitable for silver nanoparticle bonding of semiconductor elements and has excellent close adhesiveness with a power module sealing resin. A ceramic circuit substrate has a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate including aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 μm to 1.5 μm; and the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 1.5 μm.

Patent Agency Ranking