公开(公告)号：US20230138658A1

公开(公告)日：2023-05-04

申请号：US18147046

申请日：2022-12-28

Applicant: DENSO CORPORATION

Inventor： Emika ABE ,  Takuo NAGASE ,  Ryota MIWA ,  Tomoo MORINO

IPC: H01L29/08 ,  H02M7/5387 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device includes a semiconductor element configured to form an upper-lower arm circuit of a power conversion device. The semiconductor element includes a control electrode, a high-potential electrode and a low-potential electrode. A parasitic capacitance between the control electrode and the high-potential electrode changes according to a potential difference between the high-potential electrode and the low-potential electrode. A value of the parasitic capacitance at a time when the potential difference is equal to 80 percent of a breakdown voltage of the semiconductor element is defined as a first capacitance value. An arbitrary value of the parasitic capacitance at a time when the potential difference is in an inclusive range of 20 percent to 40 percent of the breakdown voltage is defined as a second capacitance value. The first capacitance value is larger than the second capacitance value.