公开(公告)号：US20210407892A1

公开(公告)日：2021-12-30

申请号：US17469303

申请日：2021-09-08

Applicant: DENSO CORPORATION

Inventor： Hiroshi ISHINO ,  Ryota MIWA ,  Shoichiro OMAE ,  Takuo NAGASE

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/50

Abstract: A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

公开(公告)号：US20230138658A1

公开(公告)日：2023-05-04

申请号：US18147046

申请日：2022-12-28

Applicant: DENSO CORPORATION

Inventor： Emika ABE ,  Takuo NAGASE ,  Ryota MIWA ,  Tomoo MORINO

IPC: H01L29/08 ,  H02M7/5387 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device includes a semiconductor element configured to form an upper-lower arm circuit of a power conversion device. The semiconductor element includes a control electrode, a high-potential electrode and a low-potential electrode. A parasitic capacitance between the control electrode and the high-potential electrode changes according to a potential difference between the high-potential electrode and the low-potential electrode. A value of the parasitic capacitance at a time when the potential difference is equal to 80 percent of a breakdown voltage of the semiconductor element is defined as a first capacitance value. An arbitrary value of the parasitic capacitance at a time when the potential difference is in an inclusive range of 20 percent to 40 percent of the breakdown voltage is defined as a second capacitance value. The first capacitance value is larger than the second capacitance value.

公开(公告)号：US20210407875A1

公开(公告)日：2021-12-30

申请号：US17468952

申请日：2021-09-08

Applicant: DENSO CORPORATION

Inventor： Ryota MIWA ,  Takuo NAGASE ,  Hiroshi ISHINO

IPC: H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/495

Abstract: A semiconductor device includes at least one semiconductor element, a sealing resin body, a first main terminal, and a second main terminal. The at least one semiconductor element has, as main electrodes, a first main electrode and a second main electrode. A main current flows between the first main electrode and the second main electrode. The sealing resin body seals the at least one semiconductor element. The first main terminal is electrically connected to the first main electrode inside the sealing resin body. The second main terminal is electrically connected to the second main electrode inside the sealing resin body. Each of the first main terminal and the second main terminal extends to an outside of the sealing resin body for connecting to an external member.