公开(公告)号：US10916506B2

公开(公告)日：2021-02-09

申请号：US16355917

申请日：2019-03-18

Applicant: DENSO CORPORATION

Inventor： Youichi Ashida ,  Tsuyoshi Fujiwara

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/3205

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film. The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film. The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

公开(公告)号：US11658174B2

公开(公告)日：2023-05-23

申请号：US17028163

申请日：2020-09-22

Applicant: DENSO CORPORATION

Inventor： Tsuyoshi Fujiwara ,  Seiji Noma

IPC: H01L27/01 ,  H01L21/768 ,  H01L23/522 ,  H01L21/3213 ,  H01L27/06

CPC classification number: H01L27/016 ,  H01L21/76885 ,  H01L23/5223 ,  H01L23/5228 ,  H01L21/32135 ,  H01L27/0688

Abstract: A semiconductor device includes a plurality of capacitors with MIM structure disposed in an interconnection layer on a substrate. Each capacitor includes a first electrode and a second electrode provided by any two interconnection parts of the interconnection layer, in which the first electrode is one of the two interconnection parts located adjacent to the substrate and the second electrode is the other located opposite to the substrate with respect to the first electrode. One of the first and second electrode of each capacitor is provided by the same interconnection part as a subject electrode, and a distance between the first electrode and the second electrode is different among the plurality of capacitors to have different capacitances. The subject electrodes provided by the same interconnection part are covered with an insulating film of the interconnection layer, and have ends on a same plane.

公开(公告)号：US10403709B2

公开(公告)日：2019-09-03

申请号：US15777681

申请日：2016-11-17

Applicant: DENSO CORPORATION

Inventor： Youhei Oda ,  Tsuyoshi Fujiwara

IPC: H01L21/20 ,  H01L49/02 ,  C23C14/06 ,  C23C16/06 ,  H01L21/822 ,  H01L27/04 ,  C23C16/34 ,  C23C16/40 ,  H01L21/285

Abstract: Roughness is eliminated and planarization is achieved by a metal oxide film on a surface of a lower electrode. Consequently, damage on a capacitive film caused by the roughness of the lower electrode is reduced. Furthermore, physical damage on the capacitive film is reduced by forming a first layer of an upper electrode by, for example, CVD. Consequently, the damage on the capacitive film is suppressed, and the reliability of the capacitive film is improved. Furthermore, not by forming the whole upper electrode by the CVD or the like, but by forming a second layer by PCD or the like on the first layer, an increase in resistance of the upper electrode is suppressed as well.