公开(公告)号：US20150270339A1

公开(公告)日：2015-09-24

申请号：US14644283

申请日：2015-03-11

Applicant: DENSO CORPORATION

Inventor： Yuuki INAGAKI ,  Kazushi ASAMI ,  Yasuhiro KITAMURA

IPC: H01L29/06 ,  H01L27/02 ,  H01L21/764 ,  H01L23/48

CPC classification number: H01L21/764 ,  H01L21/7682 ,  H01L21/76898 ,  H01L21/8249 ,  H01L21/84 ,  H01L23/481 ,  H01L24/83 ,  H01L27/0207 ,  H01L2224/83001 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.

Abstract translation: 半导体器件具有其中布置有多个元件或穿透电极的半导体衬底，并且沟槽布置成通过围绕多个元件或穿透电极来绝缘和分离多个元件或穿透元件。 沟槽布置成穿过半导体衬底的两侧，并且具有布置空间的内部部分。 因此，可以构造具有抑制绝缘击穿的结构的半导体器件，同时简化制造工艺并提高产品制造的产量。