公开(公告)号：US11764115B2

公开(公告)日：2023-09-19

申请号：US17453551

申请日：2021-11-04

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang ,  Akihito Kawai ,  Shunsuke Teranishi

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L22/22 ,  H01L21/3043 ,  H01L21/6835 ,  H01L21/7806 ,  H01L2221/68322 ,  H01L2221/68327

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region.

公开(公告)号：US11682569B2

公开(公告)日：2023-06-20

申请号：US17010307

申请日：2020-09-02

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim

IPC: H01L21/67 ,  H01L23/544 ,  H01L21/78

CPC classification number: H01L21/67092 ,  H01L21/78 ,  H01L23/544 ,  H01L2223/5446

Abstract: A workpiece cutting method of cutting a workpiece along a plurality of crossing division lines formed on a front side of the workpiece, by using a cutting blade having a thickness gradually decreasing toward an outer circumference of the cutting blade. The workpiece cutting method includes a shape checking step of checking a shape of the cutting blade; a cut depth setting step of setting a cut depth by the cutting blade into the workpiece according to the shape checked in the shape checking step such that a width of a cut groove to be formed on the front side of the workpiece becomes a previously set value; and a cutting step of cutting the workpiece with the cut depth set in the cut depth setting step, by forcing the cutting blade into the workpiece from the front side thereof.

公开(公告)号：US12198990B2

公开(公告)日：2025-01-14

申请号：US17453368

申请日：2021-11-03

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang ,  Akihito Kawai ,  Shunsuke Teranishi

IPC: H01L21/66 ,  H01L21/304 ,  H01L21/683 ,  H01L21/78

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of separating, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a through hole formed by separating the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the through hole.

公开(公告)号：US11764114B2

公开(公告)日：2023-09-19

申请号：US17453547

申请日：2021-11-04

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang ,  Akihito Kawai ,  Shunsuke Teranishi

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L22/22 ,  H01L21/3043 ,  H01L21/6835 ,  H01L21/7806 ,  H01L2221/68322 ,  H01L2221/68327

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a support substrate fixing step of fixing the wafer to a support substrate, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

公开(公告)号：US11183464B2

公开(公告)日：2021-11-23

申请号：US16149201

申请日：2018-10-02

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00

Abstract: A package substrate processing method for processing a package substrate in which a plurality of semiconductor chips on a wiring substrate are collectively sealed with a sealing agent is provided. In the package substrate processing method, a protective tape is adhered to the wiring substrate side of the package substrate, the package substrate is divided into a plurality of semiconductor packages, and a shield layer is formed on an upper surface and side surfaces of each package. In this instance, the package substrate is divided in a state in which adhesiveness of an adhesive layer of the protective tape in the periphery of the package substrate is reduced or eliminated, whereby adhesion of a metallic powder scattering at the time of the dividing to the adhesive layer of the protective tape is restrained.

公开(公告)号：US10211164B2

公开(公告)日：2019-02-19

申请号：US15845803

申请日：2017-12-18

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang ,  Fumio Uchida

IPC: H01L21/78 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

Abstract: A plurality of semiconductor packages are manufactured by a method that includes the steps of bonding a plurality of semiconductor chips on the front side of a wiring substrate, next supplying a sealing compound to the front side of the wiring substrate to form a resin layer from the sealing component on the front side of the wiring substrate, thereby forming a sealed substrate including the wiring substrate and the resin layer covering the semiconductor chips, next cutting the sealed substrate from the resin layer side by using a V blade to thereby form a V groove along each division line, next dividing the wiring substrate along each V groove to obtain a plurality of individual bare packages, and finally forming an electromagnetic shield layer on the upper surface and an inclined side surface of each bare package, thereby obtaining the plural semiconductor packages.

公开(公告)号：US20180308756A1

公开(公告)日：2018-10-25

申请号：US15958847

申请日：2018-04-20

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang

IPC: H01L21/78 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/562

Abstract: A semiconductor package has a semiconductor chip on a wiring board, sealed with a sealant. A semiconductor package substrate is formed with V grooves along division lines from a resin layer side by use of a V blade. The wiring board is divided along the V grooves into individual semiconductor packages, while forming an inclined surface and a vertical surface at each package side surface. A shield layer is formed on the package upper surface and the package side surfaces. In this instance, the aspect ratio at the vertical surface side of the package interval is controlled, whereby an appropriate shield layer is formed on the package upper surface and the package inclined surfaces, thereby securing a shielding effect, and the shield layer is formed in a thin form on the package vertical surfaces and on the groove bottom between the packages, thereby restraining generation of burs.

公开(公告)号：US11854891B2

公开(公告)日：2023-12-26

申请号：US17453411

申请日：2021-11-03

Applicant: DISCO CORPORATION

Inventor： Youngsuk Kim ,  Byeongdeck Jang ,  Akihito Kawai ,  Shunsuke Teranishi

IPC: H01L21/78 ,  H01L21/56 ,  H01L21/304 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/56

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of separating, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a through hole formed by separating the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the through hole.

公开(公告)号：US10515841B2

公开(公告)日：2019-12-24

申请号：US16025075

申请日：2018-07-02

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim

IPC: H01L21/463 ,  H01L21/683 ,  H01L21/78 ,  H01L21/304 ,  H01L21/67 ,  H01L23/00 ,  B28D5/00 ,  B28D5/02 ,  H01L21/56 ,  H01L23/552 ,  H01L23/31

Abstract: There is provided a processing method for a package substrate having a plurality of division lines formed on the front side. The processing method includes the steps of holding the back side of the package substrate by using a holding tape and fully cutting the package substrate along the division lines to such a depth corresponding to the middle of the thickness of the holding tape by using a profile grinding tool, thereby dividing the package substrate into individual semiconductor packages. The profile grinding tool has a plurality of projections for cutting the package substrate respectively along the plural division lines. Each projection has an inclined side surface.

公开(公告)号：US10403520B2

公开(公告)日：2019-09-03

申请号：US16113496

申请日：2018-08-27

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim ,  Takahiro Ishii ,  Maki Sakai

IPC: B24D5/12 ,  H01L21/48 ,  H01L21/56 ,  H01L21/67 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552

Abstract: A multi blade that processes semiconductor packages into a desired shape while dividing a package substrate includes plural cutting blades that divide the package substrate into the individual semiconductor packages and a spacer provided between two cutting blades adjacent to each other, and is configured in such a manner that the cutting blades and the spacer have the same rotation axis center. The outer surface of the spacer is formed into a transfer shape of the semiconductor package and is covered by an abrasive grain layer, and the upper surface of the package substrate is ground by the outer surface of the spacer simultaneously with cutting of the package substrate by the plural cutting blades.