公开(公告)号：US10403520B2

公开(公告)日：2019-09-03

申请号：US16113496

申请日：2018-08-27

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim ,  Takahiro Ishii ,  Maki Sakai

IPC: B24D5/12 ,  H01L21/48 ,  H01L21/56 ,  H01L21/67 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552

Abstract: A multi blade that processes semiconductor packages into a desired shape while dividing a package substrate includes plural cutting blades that divide the package substrate into the individual semiconductor packages and a spacer provided between two cutting blades adjacent to each other, and is configured in such a manner that the cutting blades and the spacer have the same rotation axis center. The outer surface of the spacer is formed into a transfer shape of the semiconductor package and is covered by an abrasive grain layer, and the upper surface of the package substrate is ground by the outer surface of the spacer simultaneously with cutting of the package substrate by the plural cutting blades.

公开(公告)号：US20190067050A1

公开(公告)日：2019-02-28

申请号：US16113496

申请日：2018-08-27

Applicant: DISCO CORPORATION

Inventor： Byeongdeck Jang ,  Youngsuk Kim ,  Takahiro Ishii ,  Maki Sakai

IPC: H01L21/67 ,  H01L21/78 ,  H01L21/56 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552 ,  B24D5/12

CPC classification number: H01L21/67092 ,  B24D5/123 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/48 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: A multi blade that processes semiconductor packages into a desired shape while dividing a package substrate includes plural cutting blades that divide the package substrate into the individual semiconductor packages and a spacer provided between two cutting blades adjacent to each other, and is configured in such a manner that the cutting blades and the spacer have the same rotation axis center. The outer surface of the spacer is formed into a transfer shape of the semiconductor package and is covered by an abrasive grain layer, and the upper surface of the package substrate is ground by the outer surface of the spacer simultaneously with cutting of the package substrate by the plural cutting blades.