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    SEVERING MACHINE
    1.
    发明申请
    SEVERING MACHINE 有权

    公开(公告)号：US20220241900A1

    公开(公告)日：2022-08-04

    申请号：US17649009

    申请日：2022-01-26

    Applicant: DISCO CORPORATION

    Inventor： Taizo KANEZAKI ,  Noboru TAKEDA ,  Keisuke WATANABE ,  Xiaoming QIU

    IPC: B23K26/38

    Abstract: A severing machine includes an ingot holding unit configured to hold an SiC ingot with a wafer, which is to be produced, facing up, an ultrasonic generation unit disposed so as to face the SiC ingot held on the ingot holding unit, and configured to generate ultrasonic vibrations, and a liquid supply unit configured to supply liquid between the wafer to be produced and the ultrasonic generation unit. The ultrasonic generation unit includes an ultrasonic transducer, and a case member having a bottom surface formed to have an area equal to or greater than an area to which the ultrasonic vibrations are desired to be applied.

    WAFER PROCESSING METHOD
    2.
    发明申请
    WAFER PROCESSING METHOD 审中-公开

    公开(公告)号：US20200006144A1

    公开(公告)日：2020-01-02

    申请号：US16453017

    申请日：2019-06-26

    Applicant: DISCO CORPORATION

    Inventor： Noboru TAKEDA

    IPC: H01L21/78 ,  H01L21/268

    Abstract: A wafer processing method of dividing a wafer into a plurality of chips along a plurality of division lines includes: a shield tunnel forming step of causing a focusing point of a pulsed laser beam of a wavelength having a transmitting property with respect to the wafer to be positioned inside the wafer and applying the pulsed laser beam, and then forming a plurality of shield tunnels each including a fine hole and an amorphous region shielding the fine hole along the division lines; and a wafer dividing step of applying an external force to the wafer and then dividing the wafer in which the shield tunnels are formed along the division lines, in which the pulsed laser beam is split to have two or more of the focusing points which are along a direction parallel to the division lines.

    CRYSTAL ORIENTATION DETECTING APPARATUS AND CRYSTAL ORIENTATION DETECTING METHOD
    3.
    发明申请
    CRYSTAL ORIENTATION DETECTING APPARATUS AND CRYSTAL ORIENTATION DETECTING METHOD 审中-公开

    公开(公告)号：US20190391083A1

    公开(公告)日：2019-12-26

    申请号：US16446215

    申请日：2019-06-19

    Applicant: DISCO CORPORATION

    Inventor： Noboru TAKEDA ,  Yukihiro KIRIBAYASHI

    IPC: G01N21/84 ,  G01N21/25 ,  G02F1/355

    Abstract: A crystal orientation detecting apparatus for detecting a crystal orientation of a nonlinear optical crystal substrate includes a laser beam applying unit applying a linearly polarized laser beam to a surface of the nonlinear optical crystal substrate, a harmonic detecting unit detecting a harmonic produced from the nonlinear optical crystal substrate due to a nonlinear optical effect, a recording unit recording the relationship between the angular displacement through which the plane of polarization of the laser beam and the nonlinear optical crystal substrate are rotated relatively to each other, and the intensity of the harmonic, and a crystal orientation detecting unit detecting the crystal orientation of the nonlinear optical crystal substrate based on the recorded relationship.

    MANUFACTURING METHOD OF PLATE-SHAPED OBJECT
    6.
    发明申请
    MANUFACTURING METHOD OF PLATE-SHAPED OBJECT 有权

    公开(公告)号：US20220064049A1

    公开(公告)日：2022-03-03

    申请号：US17404005

    申请日：2021-08-17

    Applicant: DISCO CORPORATION

    Inventor： Fumiya KAWANO ,  Noboru TAKEDA

    IPC: C03B33/02 ,  B23K26/38

    Abstract: A manufacturing method of a plate-shaped object includes a shield tunnel forming step of forming plural shield tunnels in a plate-shaped workpiece formed of a hard material and an etching step of etching the shield tunnels by an etchant. The plate-shaped object is capable of being bent by an external force. In the shield tunnel forming step, plural shield tunnels are formed in a first shield tunnel region having a first length along a line-shaped first processing-planned region set on one surface of the workpiece, and plural shield tunnels are formed in a second shield tunnel region having a second length along a line-shaped second processing-planned region that is different from a region on an extension line of the first processing-planned region and is adjacent to the first processing-planned region on the one surface.

    GRINDING APPARATUS
    7.
    发明申请
    GRINDING APPARATUS 有权

    公开(公告)号：US20210347009A1

    公开(公告)日：2021-11-11

    申请号：US17233671

    申请日：2021-04-19

    Applicant: DISCO CORPORATION

    Inventor： Suguru HIRAIWA ,  Noboru TAKEDA

    IPC: B24B53/007 ,  B05B17/06

    Abstract: A grinding apparatus includes an ultrasonic cleaning unit. The ultrasonic cleaning unit includes a pair of side walls that surround the inside and the outside of a base and grindstones, a bottom surface that connects the pair of side walls, a jet port that is formed in at least either of the side walls or the bottom surface and that jets a cleaning liquid toward at least either of the base or the grindstones, a cleaning liquid supply section that supplies the cleaning liquid to the jet port; an ultrasonic vibrator that applies an ultrasonic wave to the cleaning liquid supplied from the cleaning liquid supply section, and an electric power supply section that applies electric power to the ultrasonic vibrator.

    WAFER FORMING METHOD
    8.
    发明申请
    WAFER FORMING METHOD 有权

    公开(公告)号：US20210245304A1

    公开(公告)日：2021-08-12

    申请号：US17157320

    申请日：2021-01-25

    Applicant: DISCO CORPORATION

    Inventor： Taizo KANEZAKI ,  Noboru TAKEDA

    IPC: B23K26/57 ,  B23K26/122 ,  B06B1/02 ,  B23K26/0622

    Abstract: A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface of the SiC ingot, to form a peeling layer including a modified section and cracks; and a wafer forming step of immersing the SiC ingot in a liquid and applying an ultrasonic wave to the SiC ingot through the liquid, to thereby peel a part of the SiC ingot with the peeling layer as an interface and form the wafer. In the wafer forming step, the ultrasonic wave is applied to the SiC ingot while a sweep treatment of regularly varying the oscillation frequency of an ultrasonic vibrator is performed.

    LASER BEAM PROCESSING METHOD FOR WAFER
    9.
    发明申请
    LASER BEAM PROCESSING METHOD FOR WAFER 审中-公开
    激光光束加工方法

    公开(公告)号：US20130309844A1

    公开(公告)日：2013-11-21

    申请号：US13888552

    申请日：2013-05-07

    Applicant: DISCO CORPORATION

    Inventor： Noboru TAKEDA

    IPC: H01L21/78

    CPC classification number: H01L21/78 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

    Abstract: A laser beam processing method for a wafer includes a first processed groove forming step in which a laser beam is radiated along a planned dividing line so that the overlapping rate of condensed beam spots is equal to or less than 95%, to thereby form a first laser beam processed groove. The laser beam processing method for a wafer further includes a second processed groove forming step in which a laser beam is radiated along the first laser beam processed groove in such a manner that the overlapping rate of condensed beam spots is equal to or more than 97%, to thereby form a second laser beam processed groove at a bottom portion of the first laser beam processed groove.

    Abstract translation: 用于晶片的激光束处理方法包括：第一处理槽形成步骤，其中激光束沿着计划分割线辐射，使得聚光束斑点的重叠率等于或小于95％，从而形成第一 激光束加工槽。 用于晶片的激光束处理方法还包括第二处理槽形成步骤，其中激光束沿着第一激光束处理槽辐射，使得聚光束斑点的重叠率等于或大于97％ 从而在第一激光束处理槽的底部形成第二激光束处理槽。

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