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    Surface texturing using energy pulses
    4.
    发明授权
    Surface texturing using energy pulses 有权

    公开(公告)号：US11548092B2

    公开(公告)日：2023-01-10

    申请号：US16353119

    申请日：2019-03-14

    Applicant: Medtronic, Inc.

    Inventor： Xiangnan He ,  David A. Ruben

    IPC: B23K26/0622 ,  B23K26/046 ,  B23K26/352 ,  B23K26/122 ,  B23K26/12 ,  B23K26/082 ,  A61N1/04

    Abstract: A system includes an energy source, a focusing system, and a controller. The energy source is configured to output energy pulses to the focusing system. A chamber surrounds at least a portion of a metallic substrate and contains a liquid in contact with a surface of the metallic substrate. The controller is configured to cause the energy source to output energy pulses and cause the focusing system to focus a focal volume of the energy pulses at or near the surface of the metallic substrate that is in contact with the liquid to create micro-scale or smaller surface texturing on the metallic substrate.

    Nanoparticle Manufacturing System
    6.
    发明申请
    Nanoparticle Manufacturing System 审中-公开
    纳米颗粒制造系统

    公开(公告)号：US20160236296A1

    公开(公告)日：2016-08-18

    申请号：US14621385

    申请日：2015-02-13

    Applicant: Gold NanoTech Inc

    Inventor： SHAN-WEN TAN

    IPC: B23K26/122 ,  B23K26/12 ,  B23K26/00

    CPC classification number: B22F9/04 ,  B22F2999/00 ,  B22F2202/01 ,  B22F3/003

    Abstract: The present invention provides a nanoparticle manufacturing system differing from conventional nanoparticle fabricating equipment. In this nanoparticle manufacturing system, a laser beam emitted from a laser source is directly guided to the surface of a target disposed in an ablation chamber through a light guide tube, such that the laser beam is prevented from being influenced by reflection and/or refraction effects occurring from the cooling liquid filled in the ablation chamber. Moreover, in this nanoparticle manufacturing system, a light guidance-out end of the light guide tube is controlled to be apart from the target surface by a specific distance (

    Abstract translation: 本发明提供了与常规纳米颗粒制造设备不同的纳米颗粒制造系统。 在该纳米颗粒制造系统中，从激光源发射的激光束通过导光管直接引导到设置在消融室中的靶的表面，使得防止激光束受到反射和/或折射的影响 从填充在消融室中的冷却液产生的效果。 此外，在该纳米粒子制造系统中，导光管的导光端被控制为离开目标表面一定距离（<5mm）。 因此，尽管由激光源提供的激光束是低功率激光束（<30mJ /脉冲），激光束能够通过激光烧蚀将目标有效地处理成多个纳米颗粒。

    TOOL AND METHOD FOR REMOVING GAS HYDRATES FROM THE SURFACE OF SUBSEA OIL AND GAS EXPLORATION AND PRODUCTION EQUIPMENT THROUGH LASER RADIATION
    7.
    发明申请
    TOOL AND METHOD FOR REMOVING GAS HYDRATES FROM THE SURFACE OF SUBSEA OIL AND GAS EXPLORATION AND PRODUCTION EQUIPMENT THROUGH LASER RADIATION 审中-公开
    通过激光辐射从后置油表面除去气体水合物和气体探测和生产设备的工具和方法

    公开(公告)号：US20160167168A1

    公开(公告)日：2016-06-16

    申请号：US14436553

    申请日：2013-10-18

    Applicant: Leone Pereira Masiero

    Inventor： Leone Pereira Masiero

    IPC: B23K26/122 ,  B23K26/046 ,  B23K26/00 ,  B23K26/36

    CPC classification number: B23K26/122 ,  B08B7/0042 ,  B08B7/0071 ,  B08B9/023 ,  B23K26/046 ,  B23K26/1224 ,  B23K26/16 ,  B23K26/36 ,  B23K26/50 ,  E21B36/00 ,  E21B41/0007 ,  F17D1/05 ,  F17D3/16

    Abstract: A tool and related method for removing unwanted gas hydrates from the surface of equipment used in subsea exploration and production. The tool includes a main vessel and a power cable linked together by a connector. Inside the vessel a laser device is connected to an adjustable focus collimator by a cable, with the wavelength emitted by the laser being between 200 nm and 930 nm. When the radiation reaches the subsea exploration equipment it causes the heating thereof, which in turn heats the hydrate through conduction, breaking down the hydrate formation from the inside out. The front lid of the tools includes a window fitted with anti-reflection film that forms an interface between the vessel and the aqueous medium.

    Abstract translation: 用于从海底勘探和生产中使用的设备表面去除不需要的天然气水合物的工具和相关方法。 该工具包括通过连接器连接在一起的主容器和电力电缆。 在容器内部，激光装置通过电缆连接到可调节聚焦准直仪，激光发射的波长在200nm和930nm之间。 当辐射到达海底勘探设备时，它会导致其加热，从而进一步通过传导加热水合物，从而将水合物形成从内向外分解。 工具的前盖包括一个装有抗反射膜的窗口，该防反射膜在容器和水介质之间形成界面。

    Wafer forming method
    8.
    发明授权
    Wafer forming method 有权

    公开(公告)号：US12194571B2

    公开(公告)日：2025-01-14

    申请号：US17157320

    申请日：2021-01-25

    Applicant: DISCO CORPORATION

    Inventor： Taizo Kanezaki ,  Noboru Takeda

    IPC: B23K26/57 ,  B06B1/02 ,  B23K26/0622 ,  B23K26/122 ,  B23K101/40

    Abstract: A wafer forming method includes a peeling layer forming step of applying, to a SiC ingot, a laser beam of such a wavelength as to be transmitted through the SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed from a first surface of the SiC ingot, to form a peeling layer including a modified section and cracks; and a wafer forming step of immersing the SiC ingot in a liquid and applying an ultrasonic wave to the SiC ingot through the liquid, to thereby peel a part of the SiC ingot with the peeling layer as an interface and form the wafer. In the wafer forming step, the ultrasonic wave is applied to the SiC ingot while a sweep treatment of regularly varying the oscillation frequency of an ultrasonic vibrator is performed.

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