公开(公告)号：US20120085936A1

公开(公告)日：2012-04-12

申请号：US12900862

申请日：2010-10-08

Applicant: DON BERRIAN ,  CHENG-HUI SHEN

Inventor： DON BERRIAN ,  CHENG-HUI SHEN

IPC: G21K5/10 ,  H01L21/66

CPC classification number: H01J37/3171 ,  H01J37/3045 ,  H01J2237/24521 ,  H01J2237/24542 ,  H01J2237/30433

Abstract: A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.

Abstract translation: 一种能够监测离子注入的方法。 首先，提供离子束和工件。 接下来，通过离子束注入工件，并产生具有与离子束和工件之间的多个相对位置相关的许多信号的轮廓，其中轮廓具有至少较高部分，渐进部分和下部。 因此，通过直接分析轮廓而不参考预定轮廓，并且不使用测量离子束的轮廓仪，可以获得一些离子束信息，例如波束高度，波束宽度，离子束交叉上的离子束电流分布 切割等，并可实时监测离子注入。 此外，当依次植入许多工件时，一个或多个初始植入的工件的轮廓可以是产生用于校准下列工件的离子注入的参考。

公开(公告)号：US20120126137A1

公开(公告)日：2012-05-24

申请号：US12950366

申请日：2010-11-19

Applicant: CHENG-HUI SHEN

Inventor： CHENG-HUI SHEN

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542

Abstract: An ion implantation method and an ion implanter with a beam profiler are proposed in this invention. The method comprises setting scan conditions, detecting the ion beam profile, calculating the dose profile according to the detected ion beam profile and scan conditions, determining the displacement for ion implantation and implanting ions on a wafer surface. The ion implanter used the beam profiler to detect the ion beam profile, calculate dose profile and determine the displacement and used the displacement in ion implantation for optimizing, wherein the beam profiler comprises a body with ion channel and detection unit behind the ion channel in the body for beam profile detection. The beam profiler may be a 1-dimensional, 2-dimensional or angle beam profiler.

Abstract translation: 本发明提出了一种具有光束轮廓仪的离子注入方法和离子注入机。 该方法包括设置扫描条件，检测离子束分布，根据检测到的离子束分布和扫描条件计算剂量分布，确定离子注入的位移和在晶片表面上注入离子。 离子注入机使用光束轮廓仪检测离子束轮廓，计算剂量分布并确定位移，并使用离子注入中的位移进行优化，其中光束轮廓仪包括具有离子通道的主体和离子通道后面的检测单元 用于光束轮廓检测的主体。 光束轮廓仪可以是一维的，二维的或角度的光束分析器。