公开(公告)号：US20160238636A1

公开(公告)日：2016-08-18

申请号：US15040532

申请日：2016-02-10

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： MASAYUKI ITO

IPC: G01R19/00 ,  H01J37/317

CPC classification number: G01R19/0061 ,  H01J37/243 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/06308 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24592 ,  H01J2237/31776

Abstract: A method for estimating a lifetime of a cathode in an electron beam lithography apparatus according to an embodiment, includes: calculating emittance of the cathode by using a lifetime reference value of the cathode; calculating an emitter lifetime diameter of the cathode by using the emittance; writing a pattern on a target object by using an electron beam emitted from the cathode; measuring emission current of the electron beam; calculating an emitter diameter by using the emission current; determining a regression formula of a change with time of the emitter diameter; and estimating the lifetime of the cathode by using the regression formula and the emitter lifetime diameter.

Abstract translation: 根据实施例的用于估计电子束光刻设备中的阴极的寿命的方法包括：通过使用阴极的寿命参考值来计算阴极的发射率; 通过使用发射率计算阴极的发射极寿命直径; 通过使用从阴极发射的电子束在目标物体上写入图案; 测量电子束的发射电流; 通过使用发射电流计算发射体直径; 确定发射体直径随时间变化的回归公式; 并通过使用回归公式和发射极寿命直径来估计阴极的寿命。

公开(公告)号：US07755062B2

公开(公告)日：2010-07-13

申请号：US12391919

申请日：2009-02-24

Applicant: Takatoshi Yamashita ,  Tadashi Ikejiri

Inventor： Takatoshi Yamashita ,  Tadashi Ikejiri

IPC: H01J27/02 ,  H01J49/10 ,  H01J49/14

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/082 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.

Abstract translation: 离子源是在Z方向上在Y方向上提取长度较长的带状离子束，并设置有等离子体发生室，等离子体电极，其设置在等离子体产生室的Z方向的端部附近，具有 在Y方向上延伸的离子提取口，多个用于将电子发射到等离子体发生室中的阴极，以产生等离子体并且沿着Y方向分布在多个级中;以及磁线圈，沿着Z方向产生磁场 包含等离子体发生室内部的多个阴极的畴。

公开(公告)号：US20120085936A1

公开(公告)日：2012-04-12

申请号：US12900862

申请日：2010-10-08

Applicant: DON BERRIAN ,  CHENG-HUI SHEN

Inventor： DON BERRIAN ,  CHENG-HUI SHEN

IPC: G21K5/10 ,  H01L21/66

CPC classification number: H01J37/3171 ,  H01J37/3045 ,  H01J2237/24521 ,  H01J2237/24542 ,  H01J2237/30433

Abstract: A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.

Abstract translation: 一种能够监测离子注入的方法。 首先，提供离子束和工件。 接下来，通过离子束注入工件，并产生具有与离子束和工件之间的多个相对位置相关的许多信号的轮廓，其中轮廓具有至少较高部分，渐进部分和下部。 因此，通过直接分析轮廓而不参考预定轮廓，并且不使用测量离子束的轮廓仪，可以获得一些离子束信息，例如波束高度，波束宽度，离子束交叉上的离子束电流分布 切割等，并可实时监测离子注入。 此外，当依次植入许多工件时，一个或多个初始植入的工件的轮廓可以是产生用于校准下列工件的离子注入的参考。

公开(公告)号：US20100019172A1

公开(公告)日：2010-01-28

申请号：US12586717

申请日：2009-09-25

Applicant: Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

Inventor： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC: H01J37/30

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

Abstract: A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

Abstract translation: 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各个列单元的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准用芯片或法拉第杯。

公开(公告)号：US20230162943A1

公开(公告)日：2023-05-25

申请号：US17915034

申请日：2020-03-31

Applicant: Hitachi High-Tech Corporation

Inventor： U OH ,  Minoru YAMAZAKI ,  Yuko SASAKI

IPC: H01J37/22 ,  H01J37/28 ,  G01N23/2251 ,  G06F16/2455

CPC classification number: H01J37/222 ,  H01J37/28 ,  G01N23/2251 ,  G06F16/2455 ,  H01J2237/24564 ,  H01J2237/24521 ,  H01J2237/24578 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116

Abstract: The present invention provides a charged particle beam device with which optimal parameters for the device can be effectively derived in a short time period. This charged particle beam device comprises: an electron gun (1) that irradiates a sample (10) with an electron beam (2); an image processing unit (901) that acquires an image of the sample (10) from a signal (12) generated by the sample (10) due to the electron beam (2); a database (604) that holds correspondence between a first parameter that is an optical condition, a second parameter that is a value pertaining to device performance, and a third parameter that is information pertaining to the device configuration, and stores a plurality of analysis values and measurement values; and a learning machine (605) that searches the database (604) and derives a first parameter that satisfies a target value of the second parameter.

公开(公告)号：US09240306B2

公开(公告)日：2016-01-19

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdourahmane Ange Sarr

IPC: H01J37/00 ,  H01J37/252 ,  H01J37/09 ,  H01J37/244 ,  H01J37/30 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。

公开(公告)号：US08222619B2

公开(公告)日：2012-07-17

申请号：US12586717

申请日：2009-09-25

Applicant: Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

Inventor： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC: A61N5/00 ,  G21G5/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

Abstract: A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

Abstract translation: 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

公开(公告)号：US20190108966A1

公开(公告)日：2019-04-11

申请号：US16150675

申请日：2018-10-03

Applicant: KLA-TENCOR CORPORATION

Inventor： Gildardo R. Delgado ,  Rudy F. Garcia ,  Katerina Ioakeimidi ,  Frances Hill ,  Michael E. Romero

IPC: H01J37/06 ,  H01J37/28 ,  H01J19/24

CPC classification number: H01J37/073 ,  G02B27/0927 ,  H01J1/3044 ,  H01J1/34 ,  H01J19/24 ,  H01J37/06 ,  H01J37/26 ,  H01J37/28 ,  H01J40/06 ,  H01J40/18 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2201/3048 ,  H01J2201/308 ,  H01J2201/3423 ,  H01J2201/3425 ,  H01J2201/3426 ,  H01J2237/06333 ,  H01J2237/24521 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L21/67288

Abstract: A photocathode structure, which can include an alkali halide, has a protective film on an exterior surface of the photocathode structure. The protective film includes ruthenium. This protective film can be, for example, ruthenium or an alloy of ruthenium and platinum. The protective film can have a thickness from 1 nm to 20 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope.

公开(公告)号：US20150001423A1

公开(公告)日：2015-01-01

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdou Sarr

IPC: H01J37/252 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。

公开(公告)号：US08692216B2

公开(公告)日：2014-04-08

申请号：US13839753

申请日：2013-03-15

Applicant: Sen Corporation

Inventor： Hiroyuki Kariya ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01J37/147 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。