公开(公告)号：US20170200505A1

公开(公告)日：2017-07-13

申请号：US15398602

申请日：2017-01-04

申请人： DONGSUP JIN ,  PILSANG YOON ,  HONG RAK SON ,  JUNJIN KONG ,  YOUNG-SEOP SHIM ,  JINMAN HAN

发明人： DONGSUP JIN ,  PILSANG YOON ,  HONG RAK SON ,  JUNJIN KONG ,  YOUNG-SEOP SHIM ,  JINMAN HAN

IPC分类号： G11C16/26 ,  G11C16/04 ,  G06F3/06

CPC分类号： G11C16/26 ,  G06F3/061 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G11C7/02 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0409

摘要： A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.

公开(公告)号：US20170371742A1

公开(公告)日：2017-12-28

申请号：US15493860

申请日：2017-04-21

申请人： YOUNG-SEOP SHIM ,  JAEHONG KIM

发明人： YOUNG-SEOP SHIM ,  JAEHONG KIM

IPC分类号： G06F11/10 ,  G11C16/26 ,  G11C16/34

CPC分类号： G11C16/26 ,  G06F11/1048 ,  G11C16/0483 ,  G11C16/3436 ,  G11C16/349

摘要： A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

公开(公告)号：US20160372199A1

公开(公告)日：2016-12-22

申请号：US15055747

申请日：2016-02-29

申请人： YOUNG-SEOP SHIM ,  JAE-HONG KIM

发明人： YOUNG-SEOP SHIM ,  JAE-HONG KIM

IPC分类号： G11C16/04 ,  G11C16/26

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/34 ,  G11C16/349 ,  G11C16/3495

摘要： An operating method of a non-volatile memory device having a string including a plurality of memory cells and a plurality of auxiliary cells, the plurality of memory cells and the plurality of auxiliary cells being connected in series, includes detecting a threshold voltage of at least one of the plurality of auxiliary cells and generating an output signal corresponding to a deterioration level of the plurality of memory cells, based on the threshold voltage.

摘要翻译： 具有包括多个存储单元和多个辅助单元的串的非易失性存储器件的操作方法，所述多个存储单元和所述多个辅助单元串联连接，包括至少检测至少一个阈值电压 多个辅助单元中的一个，并且基于阈值电压产生与多个存储单元的劣化水平相对应的输出信号。