公开(公告)号：US09218159B2

公开(公告)日：2015-12-22

申请号：US13685743

申请日：2012-11-27

申请人： Changkyu Seol ,  Junjin Kong ,  Hong Rak Son ,  Pilsang Yoon

发明人： Changkyu Seol ,  Junjin Kong ,  Hong Rak Son ,  Pilsang Yoon

IPC分类号： H04L9/08 ,  G06F7/58

CPC分类号： G06F7/58 ,  G06F7/588 ,  H04L9/08 ,  H04L9/0869 ,  H04L2209/12

摘要： In a memory of non-volatile memory cells, a random number is generated by programming non-volatile memory cells, reading the programmed non-volatile memory cells using a random number read voltage selected in accordance with a characteristic of the non-volatile memory cells to generate random read data, and generating the random number from the random read data.

摘要翻译： 在非易失性存储器单元的存储器中，通过编程非易失性存储器单元来产生随机数，使用根据非易失性存储器单元的特性选择的随机数读取电压读取编程的非易失性存储器单元 生成随机读取数据，并从随机读取数据生成随机数。

公开(公告)号：US08996947B2

公开(公告)日：2015-03-31

申请号：US13598978

申请日：2012-08-30

申请人： Jungsoo Chung ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Seonghyeog Choi

发明人： Jungsoo Chung ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Seonghyeog Choi

IPC分类号： H03M13/00 ,  G06F11/10 ,  G11C11/56

CPC分类号： G06F11/1048 ,  G11C11/5628

摘要： A method generating program data to be stored in a nonvolatile memory device comprises randomizing the program data, and processing the randomized program data to reduce a frequency of at least one data state among the randomized program data.

摘要翻译： 一种生成要存储在非易失存储器件中的程序数据的方法包括随机化程序数据，并处理随机化的程序数据以减少随机化程序数据中的至少一个数据状态的频率。

公开(公告)号：US20180286495A1

公开(公告)日：2018-10-04

申请号：US15475670

申请日：2017-03-31

申请人： Eun Chu OH ,  Pilsang YOON ,  Jun Jin KONG ,  Hong Rak SON ,  Dongsup JIN

发明人： Eun Chu OH ,  Pilsang YOON ,  Jun Jin KONG ,  Hong Rak SON ,  Dongsup JIN

IPC分类号： G11C29/50 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

CPC分类号： G11C29/50004 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5004

摘要： A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.

公开(公告)号：US20130179659A1

公开(公告)日：2013-07-11

申请号：US13617786

申请日：2012-09-14

申请人： MANKEUN SEO ,  DAEWOOK KIM ,  HONG RAK SON ,  JUNJIN KONG ,  SEONGHOON WOO ,  SOONJAE WON ,  PILSANG YOON

发明人： MANKEUN SEO ,  DAEWOOK KIM ,  HONG RAK SON ,  JUNJIN KONG ,  SEONGHOON WOO ,  SOONJAE WON ,  PILSANG YOON

IPC分类号： G06F12/00

CPC分类号： G06F12/023 ,  G06F3/0656 ,  G06F3/0661 ,  G06F2212/401 ,  Y02D10/13

摘要： A memory controller comprises a host interface block comprising a compression ratio calculator configured to determine whether a compression ratio of input data exceeds a predetermined compression ratio, and a compression block configured to compress the input data as a consequence of the host compression ratio calculator determining that the compression ratio exceeds the predetermined compression ratio.

摘要翻译： 存储器控制器包括：主机接口块，包括：压缩比计算器，被配置为确定输入数据的压缩比是否超过预定压缩比;以及压缩块，其被配置为压缩输入数据，作为主压缩比计算器确定 压缩比超过预定压缩比。

公开(公告)号：US20180067697A1

公开(公告)日：2018-03-08

申请号：US15605404

申请日：2017-05-25

申请人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

发明人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

IPC分类号： G06F3/06 ,  G06N99/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0656 ,  G06F3/0679 ,  G06N99/005 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483

摘要： A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

公开(公告)号：US20130173983A1

公开(公告)日：2013-07-04

申请号：US13598978

申请日：2012-08-30

申请人： JUNGSOO CHUNG ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  PILSANG YOON ,  SEONGHYEOG CHOI

发明人： JUNGSOO CHUNG ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  PILSANG YOON ,  SEONGHYEOG CHOI

IPC分类号： G06F11/08 ,  G06F12/00

CPC分类号： G06F11/1048 ,  G11C11/5628

摘要： A method generating program data to be stored in a nonvolatile memory device comprises randomizing the program data, and processing the randomized program data to reduce a frequency of at least one data state among the randomized program data.

摘要翻译： 一种生成要存储在非易失存储器件中的程序数据的方法包括随机化程序数据，并处理随机化的程序数据以减少随机化程序数据中的至少一个数据状态的频率。

公开(公告)号：US10229749B2

公开(公告)日：2019-03-12

申请号：US15475670

申请日：2017-03-31

申请人： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Hong Rak Son ,  Dongsup Jin

发明人： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Hong Rak Son ,  Dongsup Jin

IPC分类号： G11C29/50 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

摘要： A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.

公开(公告)号：US10013211B2

公开(公告)日：2018-07-03

申请号：US15605404

申请日：2017-05-25

申请人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

发明人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

IPC分类号： G11C7/00 ,  G06F3/06 ,  G06N99/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0656 ,  G06F3/0679 ,  G06N20/00 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483

摘要： A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

公开(公告)号：US09892796B2

公开(公告)日：2018-02-13

申请号：US15398602

申请日：2017-01-04

申请人： Dongsup Jin ,  Pilsang Yoon ,  Hong Rak Son ,  Junjin Kong ,  Young-Seop Shim ,  Jinman Han

发明人： Dongsup Jin ,  Pilsang Yoon ,  Hong Rak Son ,  Junjin Kong ,  Young-Seop Shim ,  Jinman Han

IPC分类号： G11C7/00 ,  G11C16/26 ,  G06F3/06 ,  G11C16/04

CPC分类号： G11C16/26 ,  G06F3/061 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G11C7/02 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0409

摘要： A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.

公开(公告)号：US20170200505A1

公开(公告)日：2017-07-13

申请号：US15398602

申请日：2017-01-04

申请人： DONGSUP JIN ,  PILSANG YOON ,  HONG RAK SON ,  JUNJIN KONG ,  YOUNG-SEOP SHIM ,  JINMAN HAN

发明人： DONGSUP JIN ,  PILSANG YOON ,  HONG RAK SON ,  JUNJIN KONG ,  YOUNG-SEOP SHIM ,  JINMAN HAN

IPC分类号： G11C16/26 ,  G11C16/04 ,  G06F3/06

CPC分类号： G11C16/26 ,  G06F3/061 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G11C7/02 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0409

摘要： A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.