公开(公告)号：US20020162419A1

公开(公告)日：2002-11-07

申请号：US10134381

申请日：2002-04-30

Applicant: DOWA MINING CO., LTD.

Inventor： Takeharu Yamamura ,  Hidekazu Kato ,  Takashi Ohgami ,  Kishio Tayama ,  Kanichi Okuda

IPC: C22B007/04 ,  C22C028/00 ,  C22B058/00

CPC classification number: C22B58/00 ,  C22B9/02 ,  C22B9/14 ,  Y02P10/234

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract translation: 在从含有杂质的原料镓材料中分离杂质的方法中，提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料，使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心，以减小管状凝固边界的直径，并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要，通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。