公开(公告)号：US20020162419A1

公开(公告)日：2002-11-07

申请号：US10134381

申请日：2002-04-30

Applicant: DOWA MINING CO., LTD.

Inventor： Takeharu Yamamura ,  Hidekazu Kato ,  Takashi Ohgami ,  Kishio Tayama ,  Kanichi Okuda

IPC: C22B007/04 ,  C22C028/00 ,  C22B058/00

CPC classification number: C22B58/00 ,  C22B9/02 ,  C22B9/14 ,  Y02P10/234

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract translation: 在从含有杂质的原料镓材料中分离杂质的方法中，提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料，使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心，以减小管状凝固边界的直径，并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要，通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。

公开(公告)号：US20040042945A1

公开(公告)日：2004-03-04

申请号：US10393297

申请日：2003-03-20

Applicant: COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH

Inventor： Patcha Ramachandra Rao ,  Puvvada George Vijay Kumar ,  Archana Agrawal ,  Indranil Chattoraj

IPC: C22B058/00 ,  C25C001/22

CPC classification number: C22B3/0037 ,  C22B58/00 ,  Y02P10/234

Abstract: The present invention relates to a process for the recovery of gallium from Bayer process liquors. Bayer process liquor is obtained from alumina industries and contains 450 g/L Na2O, 80 g/L Al2O3 and 190null20 ppm of gallium. The present invention utilizes an organic and inorganic phase for a two stage separation process to recover gallium with high purity.

Abstract translation: 本发明涉及一种从拜耳工艺液中回收镓的方法。 拜耳处理液由氧化铝工业获得，含有450g / L的Na2O，80g / L的Al2O3和190±20ppm的镓。 本发明利用有机和无机相进行两阶段分离，以高纯度回收镓。

公开(公告)号：US20040083854A1

公开(公告)日：2004-05-06

申请号：US10613545

申请日：2003-07-02

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Toshiaki Hodozuka

IPC: C22B026/22 ,  C22B058/00 ,  C22B017/06 ,  C22B019/16

CPC classification number: C22B19/16 ,  C22B9/04 ,  C22B17/06 ,  C22B58/00 ,  Y10S266/905

Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 null C. by an upper heater in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100null C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

Abstract translation: 将99.99％的纯铟进料装入坩埚中，并通过上加热器在1×10 -4乇的真空气氛中加热至1250℃，随后铟蒸发，在内管的内表面冷凝并滴至 被回收到管状部件的下部的液体储存器中，而具有比铟低的蒸气压的杂质元素保留在坩埚内。 通过下部加热器将液体储存器中回收的铟质量加热至1100℃，并且所得到的蒸气压高于铟的杂质元素的蒸气通过管状部件上部的扩散板，从而从 系统，而铟蒸汽在与扩散板接触并重新回到液体储存器时重新产生，产生99.9999％的纯铟，同时防止铟的损失。

公开(公告)号：US20030150293A1

公开(公告)日：2003-08-14

申请号：US10336498

申请日：2003-01-02

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Toshiaki Hodozuka

IPC: C22B005/16 ,  C22B058/00

CPC classification number: C22B17/06 ,  C22B9/02 ,  C22B9/04 ,  C22B19/16 ,  C22B19/18 ,  C22B58/00 ,  Y02P10/234 ,  Y10S266/905

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250null C. by upper heater 6 in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100null C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并通过上加热器6在1×10 -4乇的真空气氛中加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴入以回收 液体储存器9在管状构件11的下部，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中回收的铟质量被下部加热器7加热至1100℃，并且所得到的杂质元素蒸气 具有比铟更高的蒸气压通过管状构件11的上部的扩散板12以从系统排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％的纯铟，同时防止 铟的损失