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1.发明授权
公开(公告)号：US5296424A
公开(公告)日：1994-03-22
申请号：US872276
申请日：1992-04-22
IPC分类号： C04B35/468 , H01P7/10 , C04B35/46
CPC分类号： C04B35/4686 , H01P7/10
摘要： A system of dielectric ceramic compositions suitable for various microwave applications. The system comprises a plurality of stoichiometrically-related compositions, each composition having its own particular set of dielectric properties and consisting essentially of a sintered mixture represented by the general formula:BaTi.sub.4-w M.sub.w O.sub.9 --xZn.sub.2 TiO.sub.4 --yBaO--zTa.sub.2 O.sub.5wherein M is at least one type of metal and 0.0.ltoreq.w.ltoreq.about 0.05 and wherein x, y, and z are molar fractions of respective components with values within the following respective ranges: 0.0.ltoreq.x.ltoreq.about 0.45; about 0.01.ltoreq.y.ltoreq.about 0.20; and 0.0.ltoreq.z.ltoreq.about 0.10.
摘要翻译： 适用于各种微波应用的介电陶瓷组合物系统。 该系统包括多个化学计量相关的组合物，每种组合物具有其自己特定的介电特性，并且基本上由以下通式表示的烧结混合物组成：BaTi4-wMwO9-xZn2TiO4-yBaO-zTa2O5，其中M为至少一种 的金属和0.0 <= w <=约0.05，并且其中x，y和z是各组分的摩尔分数，其值在以下各自的范围内：0.0 <= x <=约0.45; 约0.01 <= y <=约0.20; 并且0.0 <= z <=约0.10。
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公开(公告)号：US5316973A
公开(公告)日：1994-05-31
申请号：US10503
申请日：1993-01-28
IPC分类号： H01C7/02 , H01L21/441
CPC分类号： H01C7/021
摘要： A method of making a positive temperature coefficient of resistance (PTCR) device, and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time, and cooled to ambient temperature. The process temperature and time period are selected to be sufficent to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere, which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.
摘要翻译： 提供具有居里点和体电阻的铁电半导体的制造正温度系数（PTCR）器件和PTCR器件本身的方法。 在铁电半导体上提供导电材料层。 将该层在大于铁电半导体的居里点的工艺温度下加热一段时间，并冷却至环境温度。 选择工艺温度和时间周期足以提供大于铁电半导体的体电阻的环境层电阻。 该层可以在氧化气氛或还原气氛中加热，这也影响层的电阻。 铁电半导体可以是氧化物陶瓷或液晶的形式，并且可以包括钛酸钡。 该层可以选自金属，金属合金，金属氧化物，聚合物及其复合材料。
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公开(公告)号：US5281845A
公开(公告)日：1994-01-25
申请号：US19985
申请日：1993-02-17
CPC分类号： H01C7/021
摘要： A method of making a positive temperature coefficient of resistance (PTCR) device,and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time. End cooled to ambient temperature. The process temperature and time period are selected to be sufficient to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.
摘要翻译： 提供具有居里点和体电阻的铁电半导体的制造正温度系数（PTCR）器件和PTCR器件本身的方法。 在铁电半导体上提供导电材料层。 该层在大于铁电半导体居里点的工艺温度下加热一段时间。 终止冷却至环境温度。 选择工艺温度和时间周期足以提供大于铁电半导体的体电阻的环境层电阻。 该层可以在氧化气氛或还影响层电阻的还原气氛中加热。 铁电半导体可以是氧化物陶瓷或液晶的形式，并且可以包括钛酸钡。 该层可以选自金属，金属合金，金属氧化物，聚合物及其复合材料。
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4.发明授权Method for determining identification and concentration of an atmospheric component 失效用于确定大气组分的鉴定和浓度的方法
公开(公告)号：US5080765A
公开(公告)日：1992-01-14
申请号：US453566
申请日：1989-12-20
IPC分类号： G01N27/416 , G01N27/406 , G01N27/419
CPC分类号： G01N27/4065
摘要： Apparatus and method for determining the identity and concentration of one or more components in a test atmosphere having a known concentration of oxygen. A solid electrolyte oxygen sensor is used, having a first solid electrolyte wall in contact with, and interposed between, a first electrode and a second electrode and a second solid electrolyte wall in contact with, and interposed between a third electrode and a fourth electrode. The second and fourth electrodes are in communication with the test atmosphere. A partition wall separates the first and third electrodes forming a first chamber bounded by the first wall and the partition wall and a second chamber bounded by the partition wall and the second wall. Diffusion limiting means inhibit gas-flow of the gas from the test atmosphere to the first chamber and from the first chamber to the second chamber. A first negative voltage (or positive voltage when the unknown component has a concentraion larger than that of a stoichiometric gas mixture) is applied to the first and second electrodes generating a first electrical current on a first electric current plateau. Simultaneously the EMF across the third and fourth electrodes is measured. These two numbers are correlated with a table to determine gas component identity and concentration. Alternatively a first negative voltage is applied to the first and second electrodes generating a first electrical current. Simultaneously a second negative voltage is applied to the third and fourth electrodes generating a second electrical current. The magnitudes of said first and second voltages are in contrast to each other (the first voltages is low and the second voltage is high or vise verse, with their difference kept at least 100 mV). The second current is measured and is correlated with a figure to determine gas concentration or hydrogen-equivalent gas concentration.
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