公开(公告)号：US20120067274A1

公开(公告)日：2012-03-22

申请号：US13036304

申请日：2011-02-28

申请人： Daisuke HARA ,  Kazuhiro SHIMURA ,  Masaki MUROBAYASHI ,  Yukitomo HIROCHI

发明人： Daisuke HARA ,  Kazuhiro SHIMURA ,  Masaki MUROBAYASHI ,  Yukitomo HIROCHI

IPC分类号： C30B25/02 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/4583 ,  C23C16/4585 ,  C30B25/08 ,  C30B25/12 ,  C30B29/36

摘要： A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers.

摘要翻译： 公开了一种用于成膜设备的晶片保持架。 所述晶片保持器包括容纳多个晶片的舟皿和从由所述舟皿保持的所述多个晶片的侧表面提供反应气体的反应气体供应部分，并且所述晶片保持器还包括上晶片保持器， 当所述多个晶片由所述舟状体支撑时，所述多个晶片中的每一个的上表面包括气体引入抑制部，其抑制所述反应气体通过围绕所述多个晶片中的每一个而引导到所述多个晶片的上表面上 晶圆

公开(公告)号：US20110210118A1

公开(公告)日：2011-09-01

申请号：US13034035

申请日：2011-02-24

申请人： Yukitomo HIROCHI ,  Akinori TANAKA ,  Akihiro SATO ,  Takeshi ITOH ,  Daisuke HARA ,  Kenji SHIRAKO ,  Kazuhiro MORIMITSU ,  Masanao FUKUDA

发明人： Yukitomo HIROCHI ,  Akinori TANAKA ,  Akihiro SATO ,  Takeshi ITOH ,  Daisuke HARA ,  Kenji SHIRAKO ,  Kazuhiro MORIMITSU ,  Masanao FUKUDA

IPC分类号： H05B6/10

CPC分类号： H05B6/108

摘要： There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.

摘要翻译： 提供了一种基板处理装置和制造基板的方法，其中抑制了由金属材料制成并且安装在感应线圈外部的构件的感应加热，并且在基板的加工期间可以改善安全性。 基板处理装置包括：用于容纳基板的反应管; 感应加热单元，安装成围绕反应管的外周; 屏蔽单元，安装成围绕感应加热单元的外部; 气体供给单元，用于至少将源气体供给到所述反应管中; 以及控制器，其通过使用所述感应加热单元加热所述反应管的内部来处理所述基板，并且至少将来自所述气体供应单元的源气体供应到所述反应管中。

公开(公告)号：US20110204036A1

公开(公告)日：2011-08-25

申请号：US13029499

申请日：2011-02-17

申请人： Masaki MUROBAYASHI ,  Takatomo YAMAGUCHI ,  Kenji SHIRAKO ,  Shuhei SAIDO ,  Akihiro SATO ,  Daisuke HARA

发明人： Masaki MUROBAYASHI ,  Takatomo YAMAGUCHI ,  Kenji SHIRAKO ,  Shuhei SAIDO ,  Akihiro SATO ,  Daisuke HARA

IPC分类号： H05B1/00

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material (23) installed to surround the boat and constituting a reaction chamber (32), a reaction tube (21) installed to surround the cylindrical heat generating material, a cylindrical insulating part (25) installed between the cylindrical heat generating material and the reaction tube, a temperature measurement chip (24) installed between the cylindrical heat generating material and the cylindrical insulating part, and a radiation thermometer (42) configured to measure a temperature of the temperature measurement chip, wherein the radiation thermometer is disposed below a lower end of the reaction tube.

摘要翻译： 本发明提供一种热处理装置，其具有安装在反应室外的温度检测部，能够防止处理气体与温度检测部接触而形成膜，提高温度检测部的测定值的可靠性和再生性。 用于在多个基板上生长单晶膜或多晶膜的热处理装置包括：构造成保持多个基板的舟形件，安装成围绕船形成并构成反应室（32）的圆柱形发热材料（23） ，围绕圆筒形发热材料安装的反应管（21），安装在圆筒形发热材料和反应管之间的圆柱形绝缘部分（25），安装在圆柱形发热材料和 圆柱形绝缘部件和配置成测量温度测量芯片的温度的辐射温度计（42），其中辐射温度计设置在反应管的下端。