公开(公告)号：US20130186456A1

公开(公告)日：2013-07-25

申请号：US13557255

申请日：2012-07-25

申请人： Daisuke IDE ,  Takahiro MISHIMA ,  Masato SHIGEMATSU ,  Toshiaki BABA ,  Hiroyuki MORI ,  Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Hitoshi SAKATA ,  Ryo GOTO

发明人： Daisuke IDE ,  Takahiro MISHIMA ,  Masato SHIGEMATSU ,  Toshiaki BABA ,  Hiroyuki MORI ,  Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Hitoshi SAKATA ,  Ryo GOTO

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/078

CPC分类号： H01L31/035281 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

摘要翻译： 本发明的一个方面提供了一种太阳能电池，其包括具有光接收表面和后表面的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层，在后表面上形成第一半导体层和第二半导体层，以及形成在后表面中的沟槽，其中第一半导体层形成在沟槽的后表面上 并且所述第二半导体层在所述沟槽的侧表面上沿所述第一半导体层和所述第二半导体层交替布置的排列方向形成在所述沟槽的底表面上。

公开(公告)号：US20130247970A1

公开(公告)日：2013-09-26

申请号：US13594201

申请日：2012-08-24

申请人： Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Daisuke IDE ,  Hitoshi SAKATA ,  Takahiro MISHIMA ,  Hiroyuki MORI ,  Masato SHIGEMATSU

发明人： Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Daisuke IDE ,  Hitoshi SAKATA ,  Takahiro MISHIMA ,  Hiroyuki MORI ,  Masato SHIGEMATSU

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。