公开(公告)号：US20060124349A1

公开(公告)日：2006-06-15

申请号：US10540464

申请日：2003-12-24

申请人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

发明人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

IPC分类号： H05K1/09

CPC分类号： C30B25/18 ,  C23C16/27 ,  C23C16/545 ,  C30B25/02 ,  C30B29/04 ,  Y10T428/30

摘要： The present invention intends to provide an industrially applicable diamond electrode and a diamond-coated silicon used in the electrode. A silicon substrate having a thickness of 500 μm or less, at least partially coated with electrically conductive diamond is used as a diamond-coated silicon. In addition, an electrically conductive support substrate and the diamond-coated silicon is used as an electrode. The diamond-coated silicon is flexible and it can be adhered to the electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be easily obtained.

摘要翻译： 本发明旨在提供一种工业上应用的金刚石电极和在电极中使用的金刚石涂层的硅。 使用至少部分涂覆有导电金刚石的厚度为500μm或更小的硅衬底作为金刚石涂覆的硅。 此外，使用导电支撑基板和金刚石涂覆的硅作为电极。 金刚石涂覆的硅是柔性的并且可以粘附到导电支撑衬底上，从而可以容易地获得大面积电极和三维电极结构。

公开(公告)号：US5972795A

公开(公告)日：1999-10-26

申请号：US833125

申请日：1997-04-04

申请人： Takashi Yokoyama ,  Kazuma Yamamoto ,  Masato Yamamoto ,  Takahiro Mishima ,  Go Matsuda ,  Shigeki Itou

发明人： Takashi Yokoyama ,  Kazuma Yamamoto ,  Masato Yamamoto ,  Takahiro Mishima ,  Go Matsuda ,  Shigeki Itou

摘要： A method and an apparatus for producing a wafer from a crystalline ingot, wherein the method supplies an etching gas, having a high etching property for at least one constituent of the crystalline ingot, in a state of a molecular beam stream on a predetermined part of the crystalline ingot to be processed, volatilizing the predetermined part gradually from the ingot, and then removing the predetermined part entirely so as to cut the wafer from the ingot. According to the method, waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.

公开(公告)号：US20130247970A1

公开(公告)日：2013-09-26

申请号：US13594201

申请日：2012-08-24

申请人： Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Daisuke IDE ,  Hitoshi SAKATA ,  Takahiro MISHIMA ,  Hiroyuki MORI ,  Masato SHIGEMATSU

发明人： Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Daisuke IDE ,  Hitoshi SAKATA ,  Takahiro MISHIMA ,  Hiroyuki MORI ,  Masato SHIGEMATSU

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。

公开(公告)号：US20130186456A1

公开(公告)日：2013-07-25

申请号：US13557255

申请日：2012-07-25

申请人： Daisuke IDE ,  Takahiro MISHIMA ,  Masato SHIGEMATSU ,  Toshiaki BABA ,  Hiroyuki MORI ,  Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Hitoshi SAKATA ,  Ryo GOTO

发明人： Daisuke IDE ,  Takahiro MISHIMA ,  Masato SHIGEMATSU ,  Toshiaki BABA ,  Hiroyuki MORI ,  Mitsuaki MORIGAMI ,  Yuji HISHIDA ,  Hitoshi SAKATA ,  Ryo GOTO

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/078

CPC分类号： H01L31/035281 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

摘要翻译： 本发明的一个方面提供了一种太阳能电池，其包括具有光接收表面和后表面的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层，在后表面上形成第一半导体层和第二半导体层，以及形成在后表面中的沟槽，其中第一半导体层形成在沟槽的后表面上 并且所述第二半导体层在所述沟槽的侧表面上沿所述第一半导体层和所述第二半导体层交替布置的排列方向形成在所述沟槽的底表面上。

公开(公告)号：US20130171036A1

公开(公告)日：2013-07-04

申请号：US13822243

申请日：2011-09-22

申请人： Hiroyoshi Mori ,  Takahiro Mishima ,  Masaaki Fukuda ,  Sachio Fukuoka

发明人： Hiroyoshi Mori ,  Takahiro Mishima ,  Masaaki Fukuda ,  Sachio Fukuoka

IPC分类号： B01D53/94 ,  B01J37/08

CPC分类号： B01D53/94 ,  B01D53/944 ,  B01D2046/2433 ,  B01D2255/202 ,  B01D2255/204 ,  B01D2255/20707 ,  B01D2255/20715 ,  B01D2255/2092 ,  B01D2255/30 ,  B01D2255/915 ,  B01D2258/012 ,  B01J21/063 ,  B01J21/066 ,  B01J21/14 ,  B01J21/16 ,  B01J23/02 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/04 ,  B01J37/0009 ,  B01J37/0036 ,  B01J37/08 ,  C01G23/003 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/12 ,  C01P2004/54 ,  C01P2004/61 ,  C04B35/478 ,  C04B35/62685 ,  C04B38/0006 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3418 ,  C04B2235/5296 ,  C04B2235/787 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  F01N2330/14 ,  C04B38/0054 ,  C04B38/0074 ,  C04B38/067 ,  C04B38/0675 ,  C04B38/068

摘要： Provided are an exhaust gas purification filter having a high particulate matter (PM) combustion efficiency, a low coefficient of thermal expansion, and superior thermal resistance and a method for producing the same. An exhaust gas purification filter is formed by sintering columnar aluminum titanate particles whose surfaces have a catalyst material deposited thereon and which have an average aspect ratio (=number average major-axis length/number average minor-axis length) of 1.3 or more, wherein a catalyst made from the catalyst material by thermal treatment during the sintering is supported on the surface of the aluminum titanate.

摘要翻译： 提供具有高颗粒物（PM）燃烧效率，低热膨胀系数和优异的耐热性的废气净化过滤器及其制造方法。 废气净化过滤器是通过烧结表面具有沉积在其上的催化剂材料并且具有1.3或更大的平均纵横比（=数均长轴长/数均短轴长度））的柱状钛酸铝颗粒而形成的，其中 在烧结期间通过热处理由催化剂材料制成的催化剂负载在钛酸铝的表面上。

公开(公告)号：US20110052906A1

公开(公告)日：2011-03-03

申请号：US12989874

申请日：2009-04-22

申请人： Nobuki Itoi ,  Takahiro Mishima ,  Hidetoshi Ogawa

发明人： Nobuki Itoi ,  Takahiro Mishima ,  Hidetoshi Ogawa

IPC分类号： C04B35/478 ,  C01G23/04 ,  B32B3/26

CPC分类号： C01G23/003 ,  C01G23/047 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/20 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/16 ,  C04B35/46 ,  C04B35/478 ,  C04B35/6261 ,  C04B35/62675 ,  C04B38/0006 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3222 ,  C04B2235/3232 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/80 ,  Y10T428/26 ,  C04B38/0054 ,  C04B38/0074 ,  C04B38/0645

摘要： To obtain novel porous aluminum titanate in which aluminum titanate itself is porous, a sintered body of the porous aluminum titanate and a method for producing the porous aluminum titanate. Porous aluminum titanate is composed of porous particles having a form in which a plurality of particles of amoeba-like shape having a plurality of projections extending in random directions are fused together. For example, its pore volume within the pore diameter range of 0.0036 to 10 μm in a pore size distribution as measured by a mercury porosimeter is 0.05 ml/g or more.

摘要翻译： 为了获得其中钛酸铝本身是多孔的新型多孔钛酸铝，多孔钛酸铝的烧结体和制造多孔钛酸铝的方法。 多孔钛酸铝由具有多个在随机方向上延伸的多个突起的变形虫形状的多个颗粒熔合在一起的多孔颗粒构成。 例如，通过水银孔率计测定的孔径分布中孔径范围为0.0036〜10μm的孔体积为0.05ml / g以上。

公开(公告)号：US09252301B2

公开(公告)日：2016-02-02

申请号：US13594201

申请日：2012-08-24

申请人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

发明人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

IPC分类号： H01L31/068 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0747

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。

公开(公告)号：US09238197B2

公开(公告)日：2016-01-19

申请号：US13822243

申请日：2011-09-22

申请人： Hiroyoshi Mori ,  Takahiro Mishima ,  Masaaki Fukuda ,  Sachio Fukuoka

发明人： Hiroyoshi Mori ,  Takahiro Mishima ,  Masaaki Fukuda ,  Sachio Fukuoka

IPC分类号： B01D50/00 ,  C04B35/00 ,  B28B1/00 ,  B01D53/94 ,  B01J37/08 ,  B01J35/00 ,  B01J21/06 ,  B01J21/14 ,  B01J23/02 ,  B01J35/04 ,  B01J37/00 ,  C04B35/478 ,  C04B35/626 ,  C01G23/00 ,  B01J21/16

CPC分类号： B01D53/94 ,  B01D53/944 ,  B01D2046/2433 ,  B01D2255/202 ,  B01D2255/204 ,  B01D2255/20707 ,  B01D2255/20715 ,  B01D2255/2092 ,  B01D2255/30 ,  B01D2255/915 ,  B01D2258/012 ,  B01J21/063 ,  B01J21/066 ,  B01J21/14 ,  B01J21/16 ,  B01J23/02 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/04 ,  B01J37/0009 ,  B01J37/0036 ,  B01J37/08 ,  C01G23/003 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/12 ,  C01P2004/54 ,  C01P2004/61 ,  C04B35/478 ,  C04B35/62685 ,  C04B38/0006 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3418 ,  C04B2235/5296 ,  C04B2235/787 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  F01N2330/14 ,  C04B38/0054 ,  C04B38/0074 ,  C04B38/067 ,  C04B38/0675 ,  C04B38/068

摘要： Provided are an exhaust gas purification filter having a high particulate matter (PM) combustion efficiency, a low coefficient of thermal expansion, and superior thermal resistance and a method for producing the same. An exhaust gas purification filter is formed by sintering columnar aluminum titanate particles whose surfaces have a catalyst material deposited thereon and which have an average aspect ratio (=number average major-axis length/number average minor-axis length) of 1.3 or more, wherein a catalyst made from the catalyst material by thermal treatment during the sintering is supported on the surface of the aluminum titanate.

摘要翻译： 提供具有高颗粒物（PM）燃烧效率，低热膨胀系数和优异的耐热性的废气净化过滤器及其制造方法。 废气净化过滤器是通过烧结表面具有沉积在其上的催化剂材料并且具有1.3或更大的平均纵横比（=数均长轴长/数均短轴长度））的柱状钛酸铝颗粒而形成的，其中 在烧结期间通过热处理由催化剂材料制成的催化剂负载在钛酸铝的表面上。

公开(公告)号：US20100263722A1

公开(公告)日：2010-10-21

申请号：US12729331

申请日：2010-03-23

申请人： Koichi Kubo ,  Takahiro Mishima

发明人： Koichi Kubo ,  Takahiro Mishima

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： The invention provides a solar cell of increased manufacturing productivity. An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a back surface disposed at the opposite side from the light-receiving surface; a n-type semiconductor region and a p-type semiconductor region both formed on the back surface; and a protection layer formed on the light-receiving surface, the protection layer includes a first surface formed on the semiconductor substrate side and a second surface formed on the opposite side from the first surface, and the second surface has a higher acid-resistance than the first surface.

摘要翻译： 本发明提供了一种提高制造生产率的太阳能电池。 本发明的一个方面提供了一种太阳能电池，其包括具有光接收表面和设置在与光接收表面相对的一侧的后表面的半导体衬底; 在后表面上形成的n型半导体区域和p型半导体区域; 以及形成在所述受光面上的保护层，所述保护层包括形成在所述半导体衬底侧的第一表面和与所述第一表面相反的一侧上形成的第二表面，并且所述第二表面具有比 第一个表面。

公开(公告)号：US10181540B2

公开(公告)日：2019-01-15

申请号：US13557255

申请日：2012-07-25

申请人： Daisuke Ide ,  Takahiro Mishima ,  Masato Shigematsu ,  Toshiaki Baba ,  Hiroyuki Mori ,  Mitsuaki Morigami ,  Yuji Hishida ,  Hitoshi Sakata ,  Ryo Goto

发明人： Daisuke Ide ,  Takahiro Mishima ,  Masato Shigematsu ,  Toshiaki Baba ,  Hiroyuki Mori ,  Mitsuaki Morigami ,  Yuji Hishida ,  Hitoshi Sakata ,  Ryo Goto

IPC分类号： H01L31/18 ,  H01L31/078 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0747

摘要： An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.