公开(公告)号：US09329223B2

公开(公告)日：2016-05-03

申请号：US13540151

申请日：2012-07-02

申请人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V Tompson, Jr. ,  Annie Tipton

发明人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V Tompson, Jr. ,  Annie Tipton

IPC分类号： G01R31/00 ,  G01R31/26

CPC分类号： G01R31/2648

摘要： A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

摘要翻译： 提供了一种用于检测半导体材料中的表面和体积深度状态的方法。 在各种实施例中，该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。 该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。 此外，该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统，通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

公开(公告)号：US20130054177A1

公开(公告)日：2013-02-28

申请号：US13540151

申请日：2012-07-02

申请人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V. Tompson, JR. ,  Annie Tipton

发明人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V. Tompson, JR. ,  Annie Tipton

IPC分类号： G01R31/26 ,  G06F19/00

CPC分类号： G01R31/2648

摘要： A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

摘要翻译： 提供了一种用于检测半导体材料中的表面和体积深度状态的方法。 在各种实施例中，该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。 该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。 此外，该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统，通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。