公开(公告)号：US20130054177A1

公开(公告)日：2013-02-28

申请号：US13540151

申请日：2012-07-02

申请人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V. Tompson, JR. ,  Annie Tipton

发明人： Daniel E. Montenegro ,  Jason B. Rothenberger ,  Mark A. Prelas ,  Robert V. Tompson, JR. ,  Annie Tipton

IPC分类号： G01R31/26 ,  G06F19/00

CPC分类号： G01R31/2648

摘要： A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

摘要翻译： 提供了一种用于检测半导体材料中的表面和体积深度状态的方法。 在各种实施例中，该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。 该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。 此外，该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统，通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

公开(公告)号：US20110237057A1

公开(公告)日：2011-09-29

申请号：US13154000

申请日：2011-06-06

申请人： Mark A. Prelas ,  Tushar K. Ghos ,  Robert V. Tompson, JR. ,  Dabir S. Viswanath ,  Sudarshan Loyalka

发明人： Mark A. Prelas ,  Tushar K. Ghos ,  Robert V. Tompson, JR. ,  Dabir S. Viswanath ,  Sudarshan Loyalka

IPC分类号： H01L21/265

CPC分类号： C09K11/64 ,  H01L21/041 ,  H01L21/0455 ,  H01L21/221 ,  H01L21/2215 ,  H01L21/2225 ,  H01L21/268 ,  H01L21/326 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L33/0062 ,  H01L33/325 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.

摘要翻译： 本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。 该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束，使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中，导致宽带隙化合物 包含pn结的材料。