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1.发明授权公开(公告)号：US07022435B2
公开(公告)日：2006-04-04
申请号：US10256454
申请日：2002-09-27
IPC分类号： G01F9/00
CPC分类号： G03F7/70283 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/30
摘要： A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
摘要翻译： 提供了一种制造EUV相移掩模的方法，其包括在其上沉积具有复值反射率的薄膜多层涂层的基底。 将吸收层或缓冲层附着到薄膜多层上，改变薄膜多层涂层的厚度，以便在复值反射率中引入直接调制以产生相移特征。
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2.发明授权公开(公告)号：US06635391B2
公开(公告)日：2003-10-21
申请号：US09752887
申请日：2000-12-28
IPC分类号： G03F900
摘要： Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
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3.发明授权Method to repair localized amplitude defects in a EUV lithography mask blank 有权在EUV光刻掩模板中修复局部幅度缺陷的方法公开(公告)号：US06967168B2
公开(公告)日：2005-11-22
申请号：US09896722
申请日：2001-06-29
摘要： A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
摘要翻译： 提供了一种用于修复多层涂层中的振幅缺陷的方法和装置。 振幅缺陷下方的相当数量的层没有损坏。 修复技术通过物理去除缺陷并留下暴露下面完整层的宽而浅的凹坑来恢复涂层的局部反射率。 首先去除颗粒，凹坑或划痕，剩余的损伤区域被蚀刻掉，而不会干扰完整的下层。
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4.发明授权Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography 有权修复用于极紫外光刻的多层涂层掩模版坯料中的局部缺陷公开(公告)号：US06821682B1
公开(公告)日：2004-11-23
申请号：US09669390
申请日：2000-09-26
IPC分类号： G03F900
CPC分类号： G02B5/285 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G02B27/32 , G03F1/24 , G03F1/72 , G21K1/062 , G21K2201/067
摘要： A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.
摘要翻译： 提供了一种用于修复分层到用于极紫外光刻（EUVL）系统的掩模版坯料上的多层涂层中的缺陷的方法。 使用高横向空间分辨率，能量沉积在缺陷附近的多层涂层中。 这可以使用聚焦电子束，聚焦离子束或聚焦电磁辐射来实现。 吸收的能量将导致膜的结构改性，产生膜厚度的局部变化。 通过调节能量剂量可以以亚纳米精度控制膜厚的变化。 厚度变化的横向空间分辨率由能量沉积的定位来控制。 局部调整膜厚以校正反射场的扰动。 例如，当结构改性是局部薄膜收缩时，缺陷的修复包括使平坦化的墩或扩展凹陷的侧面。
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5.发明授权EUV lithography reticles fabricated without the use of a patterned absorber 有权在不使用图案化吸收体的情况下制造EUV光刻掩模版公开(公告)号：US07049033B2
公开(公告)日：2006-05-23
申请号：US10631359
申请日：2003-07-31
摘要： Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
摘要翻译： 通过在多层复数值的反射率中引入直接调制来消除用于常规EUVL标线的吸收材料。 诸如聚焦电子或离子束的空间局部化能源直接将掩模版图案写到反射多层涂层上。 相互扩散在膜内被能量源激活，导致多层周期在暴露区域中收缩。 收缩准确地由能量剂量确定。 通过多层周期的空间调制产生光罩平面中反射场的相位和幅度的可控变化。 用于图案化EUVL掩模版的方法具有以下优点：（1）避免与沉积和图案化吸收层相关的工艺步骤，以及（2）以高空间分辨率提供对反射场的相位和幅度的控制。
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6.发明授权公开(公告)号：US06319635B1
公开(公告)日：2001-11-20
申请号：US09454715
申请日：1999-12-06
申请人： Paul B. Mirkarimi , Sasa Bajt , Daniel G. Stearns
发明人： Paul B. Mirkarimi , Sasa Bajt , Daniel G. Stearns
IPC分类号： G03F900
摘要： A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.
摘要翻译： 在将反射涂层沉积在基底上之前，使用多层膜作为缓冲层以最小化掩模版基板上的缺陷的尺寸。 沉积在掩模版基板和反射涂层之间的多层缓冲层在掩模版基板上产生平滑的小颗粒和其它缺陷。 缺陷尺寸的减少由缓冲层生长过程中的表面松弛和多层界面处的材料的混合和体积收缩程度控制。 缓冲层通过低颗粒离子束溅射工艺以近正常入射沉积。 缓冲层的生长表面也可以被二次离子源加热以增加混合程度并改善缺陷的减轻。
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公开(公告)号：US6134049A
公开(公告)日：2000-10-17
申请号：US160264
申请日：1998-09-25
IPC分类号： B32B7/02 , B32B15/04 , G02B1/10 , G02B5/08 , G02B5/26 , G02B5/28 , G03F1/22 , G03F7/20 , F21V9/04
CPC分类号： G03F7/70958 , G02B5/0875 , G02B5/0891 , G02B5/26 , G03F1/22 , G21K1/062
摘要： Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.4 nm, the wavelength presently used for extreme ultraviolet (EUV) lithography, Si and Be have practically the same optical constants, but the Mo/Si multilayer has opposite stress than the Mo/Be multilayer. Multilayer systems of these materials have practically identical reflectivity curves. For example, stress free multilayers can be formed on a substrate using Mo/Be multilayers in the bottom of the stack and Mo/Si multilayers at the top of the stack, with the switch-over point selected to obtain zero stress. In this multilayer system, the switch-over point is at about the half point of the total thickness of the stack, and for the Mo/Be--Mo/Si system, there may be 25 deposition periods Mo/Be to 20 deposition periods Mo/Si.
摘要翻译： 应力补偿系统减少/补偿多层中的应力，而不损失反射率，同时减少与较早的缓冲层方法相比的总膜厚度。 无应力的多层系统包含具有两种不同材料组合的相反应力的多层系统，其中两个系统在设计波长处给出良好的反射率。 多层系统设计的主要优点是减压不需要任何附加层的沉积，如缓冲层方法一样。 如果两个系统的设计波长的光学性能不同，首先沉积性能较差的系统，然后再次具有更好性能的系统，从而形成多层系统的顶部。 应力降低层的组件选自具有与优选的多层反射叠层相反的应力的材料，并且同时具有允许在设计波长处获得良好的反射率的光学常数。 对于13.4nm的波长，目前用于极紫外（EUV）光刻的波长Si和Be实际上具有相同的光学常数，但Mo / Si多层具有与Mo / Be多层相反的应力。 这些材料的多层系统具有几乎相同的反射曲线。 例如，可以在堆叠底部使用Mo / Be多层和堆叠顶部的Mo / Si多层在衬底上形成无应力多层，选择切换点以获得零应力。 在该多层体系中，切换点为堆叠总厚度的大约一半，对于Mo / Be-Mo / Si系统，可能存在25个沉积周期Mo / Be至20个沉积周期Mo / Si。
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公开(公告)号：US6110607A
公开(公告)日：2000-08-29
申请号：US27308
申请日：1998-02-20
申请人： Claude Montcalm , Paul B. Mirkarimi
发明人： Claude Montcalm , Paul B. Mirkarimi
CPC分类号： G03F7/70958 , C03C17/36 , C03C17/3607 , C03C17/3613 , C03C17/3636 , C03C17/3644 , C03C17/3665 , G02B5/0891 , G02B5/26 , Y10T428/12674 , Y10T428/12826 , Y10T428/12993 , Y10T428/24975 , Y10T428/265
摘要： A high reflectance-low stress Mo-Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R.gtoreq.65%) and low residual stress (.ltoreq.100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall "relaxation" effect without reducing the reflectance significantly.
摘要翻译： 高反射率低应力Mo-Si多层反射涂层，特别适用于极紫外（EUV）波长区域。 虽然多层反射涂层具有EUV光刻技术的特殊应用，但其具有许多使用高反射率和低应力多层涂层的其它应用。 使用热和非热方法已经生产出具有高近似正常入射反射率（R> / = 65％）和低残余应力（<100MPa）的多层涂层。 热方法包括在沉积之后将多层涂层加热到给定温度一段给定的时间，以便在不显着降低反射率的情况下引起多层涂层的结构变化，这将具有整体的“松弛”效应。
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9.发明授权Process for fabricating high reflectance-low stress Mo—Si multilayer reflective coatings 失效制造高反射低应力Mo-Si多层反射涂层的工艺公开(公告)号：US06309705B1
公开(公告)日：2001-10-30
申请号：US09483274
申请日：2000-01-13
申请人： Claude Montcalm , Paul B. Mirkarimi
发明人： Claude Montcalm , Paul B. Mirkarimi
IPC分类号： B05D302
CPC分类号： G03F7/70958 , C03C17/36 , C03C17/3607 , C03C17/3613 , C03C17/3636 , C03C17/3644 , C03C17/3665 , G02B5/0891 , G02B5/26 , Y10T428/12674 , Y10T428/12826 , Y10T428/12993 , Y10T428/24975 , Y10T428/265
摘要： A high reflectance-low stress Mo—Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R≧65%) and low residual stress (≦100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall “relaxation” effect without reducing the reflectance significantly.
摘要翻译： 高反射率低应力Mo-Si多层反射涂层，特别适用于极紫外（EUV）波长区域。 虽然多层反射涂层具有EUV光刻技术的特殊应用，但其具有许多使用高反射率和低应力多层涂层的其它应用。 使用热和非热方法已经产生了具有高近似正常入射反射率（R> = 65％）和低残余应力（<= 100MPa）的多层涂层。 热方法包括在沉积之后将多层涂层加热到给定温度一段给定的时间，以便在不显着降低反射率的情况下引起多层涂层的结构变化，这将具有整体的“松弛”效应。
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公开(公告)号：US6011646A
公开(公告)日：2000-01-04
申请号：US27309
申请日：1998-02-20
申请人： Paul B. Mirkarimi , Claude Montcalm
发明人： Paul B. Mirkarimi , Claude Montcalm
CPC分类号： G03F7/70233 , G02B1/105 , G02B5/283 , G03F7/70958
摘要： A buffer-layer located between a substrate and a multilayer for counteracting stress in the multilayer. Depositing a buffer-layer having a stress of sufficient magnitude and opposite in sign reduces or cancels out deformation in the substrate due to the stress in the multilayer. By providing a buffer-layer between the substrate and the multilayer, a tunable, near-zero net stress results, and hence results in little or no deformation of the substrate, such as an optic for an extreme ultraviolet (EUV) lithography tool. Buffer-layers have been deposited, for example, between Mo/Si and Mo/Be multilayer films and their associated substrate reducing significantly the stress, wherein the magnitude of the stress is less than 100 MPa and respectively near-normal incidence (5.degree.) reflectance of over 60% is obtained at 13.4 nm and 11.4 nm. The present invention is applicable to crystalline and non-crystalline materials, and can be used at ambient temperatures.
摘要翻译： 位于基板和多层之间的缓冲层，用于抵消多层中的应力。 沉积具有足够数量和符号相反的应力的缓冲层会降低或抵消由于多层中的应力而导致的衬底中的变形。 通过在衬底和多层之间提供缓冲层，导致可调谐的接近零的净应力，因此导致基底很少或没有变形，例如用于极紫外（EUV）光刻工具的光学器件。 缓冲层已经沉积在例如Mo / Si和Mo / Be多层膜之间，并且它们的相关衬底显着降低了应力，其中应力的大小小于100MPa，分别接近正常入射（5°） 在13.4nm和11.4nm处获得超过60％的反射率。 本发明适用于结晶和非结晶材料，并且可以在环境温度下使用。
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