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公开(公告)号：US06737340B2
公开(公告)日：2004-05-18
申请号：US10176451
申请日：2002-06-19
IPC分类号： H01L21225
CPC分类号： H01L31/1804 , H01L21/228 , H01L31/022425 , H01L31/0288 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.
摘要翻译： 本发明提供了一种用于产生与硅器件的自掺杂触点的系统和方法，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化并同时掺杂硅衬底并形成 低电阻欧姆接触。 自掺杂负极接触可以由非合金的银形成，其可以通过溅射，丝网印刷糊或蒸发施加到硅衬底。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 然后将温度降低到共晶温度。 随着温度的降低，熔融硅通过液相外延改性，而掺杂剂原子掺入重新生长的硅晶格中。 一旦温度降到银 - 硅共晶温度以下，尚未通过外延再生长再结合到衬底中的硅与银形成固相合金。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。
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公开(公告)号：US06632730B1
公开(公告)日：2003-10-14
申请号：US09538034
申请日：2000-03-29
IPC分类号： H01L2126
CPC分类号： H01L31/1804 , H01L21/228 , H01L31/022425 , H01L31/0288 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.
摘要翻译： 本发明提供了一种用于产生与硅器件的自掺杂触点的系统和方法，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化并同时掺杂硅衬底并形成 低电阻欧姆接触。 自掺杂负极接触可以由非合金的银形成，其可以通过溅射，丝网印刷糊或蒸发施加到硅衬底。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 然后将温度降低到共晶温度。 随着温度的降低，熔融硅通过液相外延改性，而掺杂剂原子掺入重新生长的硅晶格中。 一旦温度降到银 - 硅共晶温度以下，尚未通过外延再生长再结合到衬底中的硅与银形成固相合金。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。
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公开(公告)号：US06703295B2
公开(公告)日：2004-03-09
申请号：US10405298
申请日：2003-04-01
IPC分类号： H01L2124
CPC分类号： H01L31/1804 , H01L21/228 , H01L31/022425 , H01L31/0288 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.
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公开(公告)号：US06664631B2
公开(公告)日：2003-12-16
申请号：US10177880
申请日：2002-06-20
IPC分类号： H01L2348
CPC分类号： H01L31/1804 , H01L21/228 , H01L31/022425 , H01L31/0288 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a system for self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.
摘要翻译： 本发明提供了一种用于对硅器件进行自掺杂接触的系统，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化，同时掺杂硅衬底并形成低温， 电阻欧姆接触。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。
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