公开(公告)号：US06632730B1

公开(公告)日：2003-10-14

申请号：US09538034

申请日：2000-03-29

申请人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

发明人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

IPC分类号： H01L2126

CPC分类号： H01L31/1804 ,  H01L21/228 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

摘要翻译： 本发明提供了一种用于产生与硅器件的自掺杂触点的系统和方法，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化并同时掺杂硅衬底并形成 低电阻欧姆接触。 自掺杂负极接触可以由非合金的银形成，其可以通过溅射，丝网印刷糊或蒸发施加到硅衬底。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 然后将温度降低到共晶温度。 随着温度的降低，熔融硅通过液相外延改性，而掺杂剂原子掺入重新生长的硅晶格中。 一旦温度降到银 - 硅共晶温度以下，尚未通过外延再生长再结合到衬底中的硅与银形成固相合金。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。

公开(公告)号：US06737340B2

公开(公告)日：2004-05-18

申请号：US10176451

申请日：2002-06-19

申请人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

发明人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

IPC分类号： H01L21225

CPC分类号： H01L31/1804 ,  H01L21/228 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

摘要翻译： 本发明提供了一种用于产生与硅器件的自掺杂触点的系统和方法，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化并同时掺杂硅衬底并形成 低电阻欧姆接触。 自掺杂负极接触可以由非合金的银形成，其可以通过溅射，丝网印刷糊或蒸发施加到硅衬底。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 然后将温度降低到共晶温度。 随着温度的降低，熔融硅通过液相外延改性，而掺杂剂原子掺入重新生长的硅晶格中。 一旦温度降到银 - 硅共晶温度以下，尚未通过外延再生长再结合到衬底中的硅与银形成固相合金。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。

公开(公告)号：US06262359B1

公开(公告)日：2001-07-17

申请号：US09414990

申请日：1999-10-07

申请人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Jalal Salami

发明人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Jalal Salami

IPC分类号： H01L31068

CPC分类号： H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

摘要： A process for fabricating a solar cell is described. The process includes: (1) providing a base layer, (2) fabricating an emitter layer of p-type conductivity on a same side as the non-illuminated surface of the base layer to provide a strongly doped p-type emitter layer and a p-n junction between the n-type base layer and the p-type emitter layer. The base layer of the present invention has n-type conductivity and is defined by an illuminated surface and a non-illuminated surface. The illuminated surface has light energy impinging thereon when the solar cell is exposed to the light energy and the non-illuminated surface is opposite the illuminated surface.

摘要翻译： 对太阳能电池的制造方法进行说明。 该方法包括：（1）提供基底层，（2）在与基底层的非照射表面相同的一侧上制造p型导电性的发射极层，以提供强掺杂的p型发射极层和 n型基极层和p型发射极层之间的pn结。 本发明的基层具有n型导电性并且由照射表面和非照射表面限定。 当太阳能电池暴露于光能并且未被照射的表面与被照射的表面相对时，照射的表面具有照射在其上的光能。

公开(公告)号：US4796839A

公开(公告)日：1989-01-10

申请号：US001804

申请日：1987-01-08

申请人： Hubert P. Davis

发明人： Hubert P. Davis

IPC分类号： B64G1/00 ,  B64G1/14 ,  B64G1/40 ,  B64G1/62

CPC分类号： B64G1/14 ,  B64G1/002 ,  B64G1/402 ,  B64G1/62

摘要： A rocket launch vehicle comprising a rocket body having a forward section and an aft section, a first rocket engine fixedly mounted to the aft section of the rocket body and axially aligned with the rocket body, a second rocket engine detachably mounted to the aft section of the rocket body and aligned axially parallel with the first rocket engine, a third rocket engine detachably mounted to the aft section of the rocket body and aligned axially parallel with the first rocket engine and being on the side of the first rocket engine opposite the second rocket engine, a first recovery structure fastened to the second rocket engine, a second recovery structure attached to the third rocket engine, and a plurality of propellant supply tanks connected to the first, second, and third rocket engines. Each of the rocket engines is a Space Shuttle main engine. The propellant tanks are detachably mounted to the exterior of the rocket body. Fuel tanks are affixed to the interior of the aft section of the rocket body and communicate with the first rocket engine. The recovery structure includes a parachute deployment arrangement for selective deployment of a parachute within a reentry vehicle fixedly attached to each of the second and third rocket engines. The forward section of the rocket body is a modified Titan 4 payload fairing.

摘要翻译： 一种火箭运载火箭，包括具有前部和后部的火箭主体，第一火箭发动机固定地安装在火箭主体的后部并与火箭主体轴向对准，第二火箭发动机可拆卸地安装到 火箭主体并且与第一火箭发动机轴向平行地对准，第三火箭发动机可拆卸地安装到火箭主体的后部并且与第一火箭发动机轴向平行且与第二火箭相对的第一火箭发动机的一侧 发动机，紧固到第二火箭发动机的第一回收结构，附接到第三火箭发动机的第二回收结构以及连接到第一，第二和第三火箭发动机的多个推进剂供应罐。 每个火箭发动机都是航天飞机主机。 推进剂罐可拆卸地安装在火箭体的外部。 燃料箱固定在火箭主体后部的内部并与第一火箭发动机连通。 恢复结构包括用于在固定地连接到第二和第三火箭发动机中的每一个的再入式车辆中选择性地部署降落伞的降落伞部署装置。 火箭身体的前部是修改的Titan 4有效载荷整流罩。

公开(公告)号：US06703295B2

公开(公告)日：2004-03-09

申请号：US10405298

申请日：2003-04-01

申请人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

发明人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

IPC分类号： H01L2124

CPC分类号： H01L31/1804 ,  H01L21/228 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature. As the temperature is decreased, the molten silicon reforms through liquid-phase epitaxy and while so doing dopant atoms are incorporated into the re-grown silicon lattice. Once the temperature drops below the silver-silicon eutectic temperature the silicon which has not already been reincorporated into the substrate through epitaxial re-growth forms a solid-phase alloy with the silver. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

公开(公告)号：US06664631B2

公开(公告)日：2003-12-16

申请号：US10177880

申请日：2002-06-20

申请人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

发明人： Daniel L. Meier ,  Hubert P. Davis ,  Ruth A. Garcia ,  Joyce A. Jessup

IPC分类号： H01L2348

CPC分类号： H01L31/1804 ,  H01L21/228 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a system for self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

摘要翻译： 本发明提供了一种用于对硅器件进行自掺杂接触的系统，其中接触金属涂覆有掺杂剂层并受到高温，从而使银与硅合金化，同时掺杂硅衬底并形成低温， 电阻欧姆接触。 银涂上一层掺杂剂。 一旦施加，银，衬底和掺杂剂被加热到高于Ag-Si共晶温度（但低于硅的熔点）的温度。 银液体比硅底物的共晶比例更高。 这种银和硅的合金是最终的接触材料，由共晶比例的硅和银构成。 在共晶比例下，最终接触材料中的银比硅显着更多，从而确保最终接触材料的良好导电性。

公开(公告)号：US06612522B1

公开(公告)日：2003-09-02

申请号：US09508504

申请日：2000-08-20

申请人： Buzz Aldrin ,  Hubert P. Davis

发明人： Buzz Aldrin ,  Hubert P. Davis

IPC分类号： B64G114

CPC分类号： B64G1/40 ,  B64G1/002 ,  B64G1/005 ,  B64G1/14 ,  B64G1/401 ,  B64G1/402

摘要： A flyback booster (200) comprising an aircraft (203) housing a launch vehicle stage as a removable rocket propulsion module (502) and several space launch vehicles using variations of the flyback booster (200) are disclosed. This flyback booster (200) functions as the first stage of a multistage space launch vehicle. The stage used in the flyback booster (200) and the upper stages of the multistage space launch vehicle (213) are selected to optimize the launch cost for a specific payload.

摘要翻译： 公开了一种反激式增压器（200），其包括使用可逆式升降器（200）的变型来容纳运载火箭台作为可移除火箭推进模块（502）的飞行器（203）和多个空间运载火箭。 该反激助力器（200）作为多级空间运载火箭的第一级。 选择反激式增压器（200）中使用的级和多级空间运载火箭（213）的上级，以优化特定有效载荷的发射成本。

公开(公告)号：US06180869B2

公开(公告)日：2001-01-30

申请号：US09072411

申请日：1998-05-04

申请人： Daniel L. Meier ,  Hubert P. Davis

发明人： Daniel L. Meier ,  Hubert P. Davis

IPC分类号： H01C310224

CPC分类号： H01L31/1804 ,  H01L21/28512 ,  H01L31/022441 ,  H01L31/0288 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： A self-doping electrode to silicon is formed primarily from a metal (major component) which forms a eutectic with silicon. A p-type dopant (for a positive electrode) or an n-type dopant (for a negative electrode) is alloyed with the major component. The alloy of major component and dopant is applied to a silicon substrate. Once applied, the alloy and substrate are heated to a temperature above the major component-silicon eutectic temperature such that the major component liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature permitting molten silicon to reform through liquid-phase epitaxy and while so doing incorporate dopant atoms into its regrown lattice. Once the temperature drops below the major component-silicon eutectic temperature the silicon, which has not already regrown into the lattice, forms a solid-phase alloy with the major component and the remaining unused dopant. This alloy of major component, silicon and unused dopant is the final contact material. Alternatively, a self-doping electrode may be formed from an unalloyed metal applied to a silicon substrate. The metal and substrate are heated to a temperature above the metal-silicon eutectic temperature in an ambient gas into which a source of vaporized dopant atoms has been introduced. Dopant atoms in the ambient gas are absorbed by the molten mixture of metal-silicon to a much greater extent than they are absorbed by the solid silicon substrate surfaces. The temperature is then decreased to below the metal-silicon eutectic temperature. During this temperature decrease, the doped regrown silicon layer and the metal-silicon alloy final contact material are created in the same process as described above.

摘要翻译： 硅的自掺杂电极主要由与硅形成共晶的金属（主要成分）形成。 p型掺杂剂（用于正电极）或n型掺杂剂（用于负极）与主要组分合金化。 主要组分和掺杂剂的合金被施加到硅衬底。 一旦施加，合金和基底被加热到高于主要组分 - 硅共晶温度的温度，使得主要组分比硅基底的共晶比液化多。 然后将温度降低到共晶温度，允许熔融硅通过液相外延重整，同时将掺杂剂原子并入其再生晶格中。 一旦温度下降到主要成分 - 硅共晶温度以下，尚未重新生长到晶格中的硅与主要成分和剩余的未使用的掺杂剂形成固相合金。 主要组分，硅和未掺杂的合金是最终的接触材料。 或者，自掺杂电极可以由施加到硅衬底的非合金化金属形成。 将金属和衬底加热到​​高于金属 - 硅共晶温度的温度，在环境气体中已引入蒸发的掺杂剂原子源。 环境气体中的掺杂原子被金属硅的熔融混合物吸收得比它们被固体硅衬底表面吸收的程度大得多。 然后将温度降低到低于金属 - 硅共晶温度。 在该温度降低期间，以与上述相同的方法制造掺杂的再生硅层和金属 - 硅合金最终接触材料。