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公开(公告)号:US06803305B2
公开(公告)日:2004-10-12
申请号:US10120755
申请日:2002-04-10
申请人: Daniel Yen , Wei Hua Cheng , Yakub Aliyu , Ding Yi
发明人: Daniel Yen , Wei Hua Cheng , Yakub Aliyu , Ding Yi
IPC分类号: H01L214763
CPC分类号: H01L21/76804 , H01L21/76807 , H01L2221/1063
摘要: A method for forming a via in a damascene process. In one embodiment, the present method comprises depositing a material into a via formed using a damascene process. More particularly, in one embodiment, the material which is comprised of a substantially conformal material which has an etch selectivity with respect to the substrate into which the via is formed. Furthermore, in this embodiment, the material is deposited along the sidewalls and the base of the via. Next, the present embodiment etches material such that the via is formed having a profile conducive to the adherence of overlying material thereto. In this embodiment, the etching of the material is performed without substantially etching the substrate into which the via is formed. In so doing, the present embodiment creates a via in a damascene process which allows for the formation of a metallized interconnect which is substantially free of voids.
摘要翻译: 一种在镶嵌工艺中形成通孔的方法。 在一个实施例中,本方法包括将材料沉积到使用镶嵌工艺形成的通孔中。 更具体地说,在一个实施方案中,由基本上保形材料组成的材料,其相对于其中形成通孔的衬底具有蚀刻选择性。 此外,在本实施例中,材料沿通孔的侧壁和基底沉积。 接下来,本实施例蚀刻材料,使得通孔形成具有有利于其上覆盖材料的粘附的轮廓。 在本实施例中,对基板进行蚀刻,而不会基本上蚀刻形成通孔的基板。 在这样做时,本实施例在镶嵌工艺中形成通孔,其允许形成基本上没有空隙的金属化互连。
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公开(公告)号:US06441676B1
公开(公告)日:2002-08-27
申请号:US09823694
申请日:2001-03-30
申请人: Sean M. Koehl , Dean Samara-Rubio , Ding Yi
发明人: Sean M. Koehl , Dean Samara-Rubio , Ding Yi
IPC分类号: H01H3776
CPC分类号: H01L23/5252 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要: A method for programming an antifuse circuit that includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serves as another electrode of the capacitor. The antifuse is programmed by eternally provided radiation that can rupture the gate oxide so that the gate and the well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
摘要翻译: 一种用于编程包括电容器和检测器的反熔断电路的方法。 在井中使用标准MOS工艺形成电容器。 栅极用作一个电极,阱用作电容器的另一个电极。 反熔丝通过永久提供的辐射来编程,其可以使栅极氧化物破裂,使得栅极和阱可以彼此接触。 栅极和阱形成PN结,将电容器变换为二极管。 二极管提供编程反熔丝的导电路径。
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公开(公告)号:US06888398B2
公开(公告)日:2005-05-03
申请号:US10167802
申请日:2002-06-11
申请人: Sean M. Koehl , Dean Samara-Rubio , Ding Yi
发明人: Sean M. Koehl , Dean Samara-Rubio , Ding Yi
IPC分类号: G11C17/18 , H01L23/525 , H01H37/76
CPC分类号: H01L23/5252 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要: An antifuse circuit includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serving as another electrode of the capacitor. The antifuse is programmed by externally provided radiation that can rupture the gate oxide so that the gate and well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
摘要翻译: 反熔丝电路包括电容器和检测器。 在井中使用标准MOS工艺形成电容器。 栅极用作一个电极,阱用作电容器的另一个电极。 反熔丝通过外部提供的辐射来编程,其可以使栅极氧化物断裂,使得栅极和阱可以彼此接触。 栅极和阱形成PN结,将电容器变换为二极管。 二极管提供编程反熔丝的导电路径。
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