公开(公告)号：US20090232649A1

公开(公告)日：2009-09-17

申请号：US12047046

申请日：2008-03-12

申请人： Wei-Hua Cheng

发明人： Wei-Hua Cheng

IPC分类号： F01D1/02

CPC分类号： F01D1/02 ,  F01D15/067

摘要： A pneumatic turbine motor air chamber drives a pneumatic turbine to rotate through compressed air. The pneumatic turbine has a ring extended from inside thereof that has a plurality of barriers and forms a housing space to hold a speed regulator. The pneumatic turbine also has an air intake coupling hole leading to the housing space and at least one air discharge vent communicating with an air passage to discharge the compressed air. The ring is integrally formed with the pneumatic turbine to enhance operation steadiness of the pneumatic turbine.

摘要翻译： 气动涡轮机马达空气室驱动气动涡轮机通过压缩空气旋转。 气动涡轮机具有从其内部延伸的环，其具有多个障碍物并形成容纳空间以保持速度调节器。 气动涡轮机还具有通向壳体空间的进气联接孔和与空气通道连通以排出压缩空气的至少一个排气口。 环与气动涡轮一体地形成，以增强气动涡轮的运行稳定性。

公开(公告)号：US06803305B2

公开(公告)日：2004-10-12

申请号：US10120755

申请日：2002-04-10

申请人： Daniel Yen ,  Wei Hua Cheng ,  Yakub Aliyu ,  Ding Yi

发明人： Daniel Yen ,  Wei Hua Cheng ,  Yakub Aliyu ,  Ding Yi

IPC分类号： H01L214763

CPC分类号： H01L21/76804 ,  H01L21/76807 ,  H01L2221/1063

摘要： A method for forming a via in a damascene process. In one embodiment, the present method comprises depositing a material into a via formed using a damascene process. More particularly, in one embodiment, the material which is comprised of a substantially conformal material which has an etch selectivity with respect to the substrate into which the via is formed. Furthermore, in this embodiment, the material is deposited along the sidewalls and the base of the via. Next, the present embodiment etches material such that the via is formed having a profile conducive to the adherence of overlying material thereto. In this embodiment, the etching of the material is performed without substantially etching the substrate into which the via is formed. In so doing, the present embodiment creates a via in a damascene process which allows for the formation of a metallized interconnect which is substantially free of voids.

摘要翻译： 一种在镶嵌工艺中形成通孔的方法。 在一个实施例中，本方法包括将材料沉积到使用镶嵌工艺形成的通孔中。 更具体地说，在一个实施方案中，由基本上保形材料组成的材料，其相对于其中形成通孔的衬底具有蚀刻选择性。 此外，在本实施例中，材料沿通孔的侧壁和基底沉积。 接下来，本实施例蚀刻材料，使得通孔形成具有有利于其上覆盖材料的粘附的轮廓。 在本实施例中，对基板进行蚀刻，而不会基本上蚀刻形成通孔的基板。 在这样做时，本实施例在镶嵌工艺中形成通孔，其允许形成基本上没有空隙的金属化互连。

公开(公告)号：US06713335B2

公开(公告)日：2004-03-30

申请号：US10225805

申请日：2002-08-22

申请人： Daniel Yen ,  Ching-Thiam Chung ,  Wei Hua Cheng ,  Chester Nieh ,  Tong Boon Lee

发明人： Daniel Yen ,  Ching-Thiam Chung ,  Wei Hua Cheng ,  Chester Nieh ,  Tong Boon Lee

IPC分类号： H01L218238

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28097 ,  H01L21/28167 ,  H01L21/76229 ,  H01L21/823878 ,  H01L29/495 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6659

摘要： A process for fabricating a CMOS device in which conductive gate structures are defined self-aligned to shallow trench isolation (STI), regions, without using a photolithographic procedure, has been developed. The process features definition of shallow trench openings in regions of a semiconductor substrate not covered by dummy gate structures, or by silicon oxide spacers located on sides of the dummy gate structures. Filling of the shallow trench openings with silicon oxide, and removal of the dummy gate structures, result in STI regions comprised of filled shallow trench openings, overlying silicon oxide shapes, and silicon oxide sidewall spacers on the sides of the overlying silicon oxide shapes. Formation of silicon nitride spacers on the sides of the STI regions, is followed by deposition of a high k gate insulator layer and of a conductive gate structure, with the conductive gate structure formed self-aligned to the STI regions.

摘要翻译： 已经开发了制造CMOS器件的方法，其中导电栅结构被限定为与浅沟槽隔离（STI）区域自对准，而不使用光刻工艺。 该工艺的特征是在未被虚拟栅极结构覆盖的半导体衬底的区域中或通过位于虚拟栅极结构的侧面上的氧化硅间隔区的浅沟槽开口的定义。 用氧化硅填充浅沟槽开口和去除虚拟栅极结构导致STI区域由覆盖的氧化硅形状的填充的浅沟槽开口和覆盖的氧化硅形状的侧面上的氧化硅侧壁间隔件组成。 在STI区域的侧面上形成氮化硅间隔物，随后沉积高k栅极绝缘体层和导电栅极结构，导电栅极结构与STI区域自对准。

公开(公告)号：US5743138A

公开(公告)日：1998-04-28

申请号：US788872

申请日：1997-01-22

申请人： Wei Hua Cheng

发明人： Wei Hua Cheng

IPC分类号： G01F1/22 ,  G01F23/64 ,  G01F23/76

CPC分类号： G01F1/22 ,  G01F23/64 ,  G01F23/76

摘要： A float device is disclosed with an improved external surface having an outwardly concave curvature and a plurality of elongated grooves spirally formed on the concave surface. The concave surface provides improved clearance between the float device and the walls of the pipe that it is disposed in. Therefore, the float device is less subject to being lodged or stuck especially in highly viscous liquids. The spiral grooves provide additional passageway and stability by imparting rotational torque to the floating device when measuring flow rates in moving fluids in pipes. In another embodiment, the float device is annular in shape having an inner surface with a curvature and spiral grooves. Same improved effects are obtained as the float device rides up and down a column like a collar in measuring the fluid level or fluid flow rates.

摘要翻译： 公开了具有改进的外表面的浮动装置，该外表面具有向外凹的曲率以及螺旋地形成在凹表面上的多个细长槽。 凹面在浮动装置与其所配置的管的壁之间提供改善的间隙。因此，浮动装置较少被卡住或卡住，特别是在高粘性液体中。 当测量管道中流动的流体中的流速时，螺旋槽通过向浮动装置施加旋转扭矩来提供额外的通道和稳定性。 在另一个实施例中，浮动装置是环形的，具有具有曲率和螺旋槽的内表面。 当测量流体液位或流体流速时，浮动装置可以上升和下降一个柱状的柱，获得相同的改进效果。

公开(公告)号：US07067869B2

公开(公告)日：2006-06-27

申请号：US10755495

申请日：2004-01-12

申请人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

发明人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

IPC分类号： H01L29/92

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom electrode. The areas of the top electrodes of these individual capacitors are chosen to be in an integral ratio to one another so that they can be combined to produce any capacitance within a range of unit values. For example, if four capacitors whose areas are in the ratio of 5:2:1:1, are provided, then any capacitance in a range of from 1 to 9 can be generated, depending on how the top electrodes are connected. Such connections can be hard-wired within the final wiring level to provide a factory adjustable capacitor or they can be connected through field programmable devices to produce a field programmable capacitor. A process for manufacturing the device is also described.

公开(公告)号：US06689643B2

公开(公告)日：2004-02-10

申请号：US10132337

申请日：2002-04-25

申请人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

发明人： Wei Hua Cheng ,  Daniel Yen ,  Chit Hwei Ng ,  Marvin Liao

IPC分类号： H01L2182

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom electrode. The areas of the top electrodes of these individual capacitors are chosen to be in an integral ratio to one another so that they can be combined to produce any capacitance within a range of unit values. For example, if four capacitors whose areas are in the ratio of 5:2:1:1, are provided, then any capacitance in a range of from 1 to 9 can be generated, depending on how the top electrodes are connected. Such connections can be hard-wired within the final wiring level to provide a factory adjustable capacitor or they can be connected through field programmable devices to produce a field programmable capacitor. A process for manufacturing the device is also described.

公开(公告)号：US08192156B2

公开(公告)日：2012-06-05

申请号：US12047046

申请日：2008-03-12

申请人： Wei-Hua Cheng

发明人： Wei-Hua Cheng

IPC分类号： F04D29/44

CPC分类号： F01D1/02 ,  F01D15/067

摘要： A pneumatic turbine motor air chamber drives a pneumatic turbine to rotate through compressed air. The pneumatic turbine has a ring extended from inside thereof that has a plurality of barriers and forms a housing space to hold a speed regulator. The pneumatic turbine also has an air intake coupling hole leading to the housing space and at least one air discharge vent communicating with an air passage to discharge the compressed air. The ring is integrally formed with the pneumatic turbine to enhance operation steadiness of the pneumatic turbine.

摘要翻译： 气动涡轮机马达空气室驱动气动涡轮机通过压缩空气旋转。 气动涡轮机具有从其内部延伸的环，其具有多个障碍物并形成容纳空间以保持速度调节器。 气动涡轮机还具有通向壳体空间的进气联接孔和与空气通道连通以排出压缩空气的至少一个排气口。 环与气动涡轮一体地形成，以增强气动涡轮的运行稳定性。

公开(公告)号：US5980186A

公开(公告)日：1999-11-09

申请号：US721666

申请日：1996-09-27

申请人： Wei Hua Cheng

发明人： Wei Hua Cheng

IPC分类号： H01L21/677 ,  B65G1/00

CPC分类号： H01L21/67781 ,  Y10S414/137

摘要： A semiconductor wafer carrier fork cover to prevent damage to prevent breakage of the semiconductor wafer carrier forks mounted on a robotic semiconductor wafer transfer system during preventative maintenance procedures is described. A semiconductor wafer carrier fork cover has a lower support unit. The lower support unit will fit onto the base of a robotic semiconductor wafer transfer system. An upper covering unit is integrally attached to the lower support unit and will shield the semiconductor wafer carrier forks during preventive maintenance procedures.

摘要翻译： 描述了用于防止损坏的半导体晶片载体叉盖，以防止在预防性维护过程中安装在机器人半导体晶片传送系统上的半导体晶片载体叉的破损。 半导体晶片载体叉盖具有下支撑单元。 下支撑单元将装配到机器人半导体晶片传送系统的基座上。 上覆盖单元一体地附接到下支撑单元，并且将在预防性维护过程中屏蔽半导体晶片载体叉。

公开(公告)号：US06686279B2

公开(公告)日：2004-02-03

申请号：US10114680

申请日：2002-04-01

申请人： Daniel Yen ,  Wei Hua Cheng ,  Yakub Aliyu ,  Lee Yuan Ping

发明人： Daniel Yen ,  Wei Hua Cheng ,  Yakub Aliyu ,  Lee Yuan Ping

IPC分类号： H01L2144

CPC分类号： H01L21/76831 ,  H01L21/76802

摘要： A method and apparatus for reducing gouging during via formation. In one embodiment, the present invention is comprised of a method which includes forming an opening into a substrate. The opening is formed extending into the substrate and terminating on at least a portion of a target to which it is desired to form an electrical connection. After the formation of the opening, the present embodiment lines the opening with a liner material. In this embodiment, the liner material is adapted to at least partially fill a portion of the opening which is not landed on the target. The liner material of the present embodiment prevents substantial further etching of the substrate conventionally caused by the opening being at least partially unlanded on the target. Next, the present embodiment subjects the liner material to an etching process such that the liner material is substantially removed from that region of the target where the opening was landed on the target. In this embodiment, liner material residing in the region where the opening is unlanded prevents further gouging of the substrate proximate to the target.

摘要翻译： 一种用于在通孔形成期间减少气刨的方法和装置。 在一个实施例中，本发明包括一种方法，该方法包括在基底中形成开口。 开口形成为延伸到基板中并终止于期望形成电连接的目标的至少一部分上。 在形成开口之后，本实施例用衬里材料排列开口。 在该实施例中，衬垫材料适于至少部分地填充未着陆在靶上的开口的一部分。 本实施例的衬垫材料防止了通常由开口至少部分地不在目标上引起的基板的进一步蚀刻。 接下来，本实施例使衬里材料进行蚀刻工艺，使得衬里材料基本上从开口落在靶上的靶的区域中去除。 在这个实施例中，位于开口未被覆盖的区域中的衬垫材料防止了靠近靶的衬底进一步的刨削。

公开(公告)号：US06630380B1

公开(公告)日：2003-10-07

申请号：US10261303

申请日：2002-09-30

申请人： Wei-Hua Cheng ,  Daniel Yen ,  Kunihiko Takahashi ,  Ming Lei ,  Thomas Joy

发明人： Wei-Hua Cheng ,  Daniel Yen ,  Kunihiko Takahashi ,  Ming Lei ,  Thomas Joy

IPC分类号： H01L218242

CPC分类号： H01L21/76895 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： A method for making metal-insulator-metal (MIM) capacitors having insulators with high-dielectric-constant or ferroelectric interelectrode films compatible with the dual-damascene process is achieved. The method of integrating the MIM with a dual-damascene process is to form a planar a first insulating layer and to deposit an etch-stop layer and a second insulating layer. Capacitor node contact openings are etched to the substrate and first recesses are etched to the etch-stop layer. The contact openings and first recesses are filled with a conducting layer using a dual-damascene process. Second recesses are formed in the second insulating layer around the capacitor node contacts. A conformal first metal layer, an interelectrode dielectric layer, and a second metal layer are deposited, and are patterned at the same time to form the capacitors over the node contacts. The second recesses increase the capacitor area while the simultaneous patterning of the metal layers results in fewer processing steps.

摘要翻译： 实现了具有与双镶嵌工艺兼容的高介电常数或铁电电极间绝缘体的金属绝缘体金属（MIM）电容器的方法。 将MIM与双镶嵌工艺集成的方法是形成平面的第一绝缘层并沉积蚀刻停止层和第二绝缘层。 将电容器节点接触开口蚀刻到衬底上，并将第一凹槽蚀刻到蚀刻停止层。 接触开口和第一凹槽使用双镶嵌工艺填充导电层。 第二凹陷形成在电容器节点触点周围的第二绝缘层中。 沉积保形第一金属层，电极间电介质层和第二金属层，并且同时形成图案以在节点触点上形成电容器。 第二凹槽增加了电容器面积，而金属层的同时构图导致较少的加工步骤。