公开(公告)号：US08338315B2

公开(公告)日：2012-12-25

申请号：US12037222

申请日：2008-02-26

申请人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

发明人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

IPC分类号： H01L21/00

CPC分类号： C08J3/24 ,  C08J2383/00 ,  H01L21/3105 ,  H01L21/76825

摘要： Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

摘要翻译： 用于固化基于硅的低k介电材料的方法通常包括将硅基低k介电材料暴露于具有约10至约500ppm的氧化剂的惰性气氛中的紫外辐射，持续一段时间和强度对 固化基于硅的低k电介质材料，以便在紫外线照射之前相对于硅基低k电介质材料改变化学，物理，机械和电学特性及其组合中所选择的一种。 本文还公开了基本上不含亚氧化SiO种类的硅基低k电介质材料。

公开(公告)号：US20090215282A1

公开(公告)日：2009-08-27

申请号：US12037222

申请日：2008-02-26

申请人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

发明人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

IPC分类号： H01L21/268 ,  C01B33/00

CPC分类号： C08J3/24 ,  C08J2383/00 ,  H01L21/3105 ,  H01L21/76825

摘要： Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

摘要翻译： 用于固化基于硅的低k电介质材料的工艺通常包括在惰性气氛中将基于硅的低k电介质材料暴露于具有约10至约500ppm的氧化剂的惰性气氛中一段时间​​和强度 有效地固化基于硅的低k电介质材料，以便在紫外线辐射暴露之前相对于硅基低k电介质材料改变化学，物理，机械和电学性质及其组合中所选择的一种。 本文还公开了基本上不含亚氧化SiO种类的硅基低k电介质材料。