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    Organic light emitting display (OLED) and its method of manufacture
    7.
    发明申请
    Organic light emitting display (OLED) and its method of manufacture 审中-公开
    有机发光显示器（OLED）及其制造方法

    公开(公告)号：US20080074038A1

    公开(公告)日：2008-03-27

    申请号：US11819139

    申请日：2007-06-25

    申请人： Hee-Kyung Kim ,  Shinichiro Tamura ,  Das Rupasree Ragini ,  Young-Hun Byun ,  O-Hyun Kwon ,  Che-Un Yang ,  Young-Mok Son

    发明人： Hee-Kyung Kim ,  Shinichiro Tamura ,  Das Rupasree Ragini ,  Young-Hun Byun ,  O-Hyun Kwon ,  Che-Un Yang ,  Young-Mok Son

    IPC分类号： H01J1/62 ,  H01J9/02 ,  H01L51/54 ,  H01L51/56

    CPC分类号： H01L51/5048 ,  H01L51/5012 ,  H01L2251/5384 ,  H01L2251/552

    摘要： An Organic Light Emitting Display (OLED) and a method of manufacturing the OLED includes: a first electrode arranged on a substrate; a Hole Transporting Layer (HTL) arranged on the first electrode; a light Emitting Layer (EL) arranged on the HTL; an Electron Transporting Layer (ETL) arranged on the light EL; and a second electrode arranged on the ETL; the light EL includes a soluble hole transporting host, a soluble electron transporting host, and a soluble light emitting dopant; a difference of a Highest Occupied Molecular Orbital (HOMO) level between the HTL and the hole transporting host respectively and the light emitting dopant is 1 eV or less; a difference of a HOMO level between the HTL and the hole transporting host respectively and the electron transporting host is 0.5eV or more; a difference of a Lowest Unoccupied Molecular Orbital (LUMO) level between the ETL and the electron transporting host respectively and the light emitting dopant is 1 eV or less; and a difference of a LUMO level between the ETL and the electron transporting host respectively and the hole transporting host is 0.5 eV or more.

    摘要翻译： 有机发光显示器（OLED）和制造OLED的方法包括：布置在基板上的第一电极; 布置在第一电极上的空穴传输层（HTL）; 布置在HTL上的发光层（EL）; 布置在光EL上的电子传输层（ETL）; 和布置在ETL上的第二电极; 光EL包括可溶性空穴传输基质，可溶性电子传递宿主和可溶性发光掺杂剂; HTL和空穴传输主体之间的最高占据分子轨道（HOMO）水平和发光掺杂剂的差异为1eV或更小; HTL和空穴传输宿主和电子传输宿主之间的HOMO能级的差异为0.5eV以上; ETL和电子传输性宿主和发光掺杂剂之间的最低未占分子轨道（LUMO）水平的差异为1eV以下; 并且ETL和电子传输性宿主之间的LUMO能级和空穴传输性主体的差为0.5eV以上。