公开(公告)号：US20090230330A1

公开(公告)日：2009-09-17

申请号：US12398533

申请日：2009-03-05

Applicant: David COOPER

Inventor： David COOPER

IPC: G21K5/10

CPC classification number: G01N1/286 ,  G01N1/32 ,  G01N2001/2873 ,  H01L21/268

Abstract: The invention relates to a method of repairing crystal defects buried within a specimen (10) deriving from a semiconductor device. This specimen (10) is prepared by the use of a focused ion beam that has caused said defects. The method consists in subjecting the specimen (10) to a laser annealing operation, the laser (12) having a power low enough not to melt the semiconductor material of the specimen (10) but high enough to eliminate the defects.Application to the preparation of specimens that have to be analysed by electron microscopy.

Abstract translation: 本发明涉及一种修复掩埋在从半导体器件衍生的样品（10）内的晶体缺陷的方法。 该样品（10）通过使用引起所述缺陷的聚焦离子束来制备。 该方法包括对样品（10）进行激光退火操作，激光器（12）具有足够低的功率，不能熔化样品（10）的半导体材料，但足够高以消除缺陷。 应用于必须通过电子显微镜分析的样品的制备。