公开(公告)号：US06605519B2

公开(公告)日：2003-08-12

申请号：US09846214

申请日：2001-05-02

Applicant: David G. Lishan

Inventor： David G. Lishan

IPC: H01L2122

CPC classification number: H01L29/66848 ,  H01L21/28 ,  H01L21/28587 ,  H01L29/66242 ,  H01L29/66318 ,  H01L29/66863 ,  Y10S438/951

Abstract: A method for forming an etching mask structure on a substrate includes etching the substrate, laterally expanding the etching mask structure, and depositing a self-aligned metal layer that is aligned to the originally masked area. The etching can be isotropic or anisotropic. The self-aligned metal layer can be distanced from the original etching masked area based on the extent of the intentionally laterally expanded etching mask layer. Following metal deposition, the initial mask structure can be removed, thus lifting off the metal atop it. The etching mask structure can be a resist and can be formed using conventional photolithography materials and techniques and can have nearly vertical sidewalls. The lateral extension can include a silylation technique of the etching mask layer following etching. The above method can be utilized to form bipolar, hetero-bipolar, or field effect transistors.

Abstract translation: 在衬底上形成蚀刻掩模结构的方法包括蚀刻衬底，横向扩展蚀刻掩模结构，以及沉积与原来掩蔽区域对准的自对准金属层。 蚀刻可以是各向同性或各向异性的。 基于有意横向扩展的蚀刻掩模层的程度，自对准金属层可以远离原始蚀刻掩模区域。 在金属沉积之后，可以去除初始掩模结构，从而将金属顶起来。 蚀刻掩模结构可以是抗蚀剂，并且可以使用常规的光刻材料和技术形成，并且可以具有几乎垂直的侧壁。 侧向延伸可以包括蚀刻后的蚀刻掩模层的甲硅烷基化技术。 上述方法可用于形成双极型，异质双极型或场效应晶体管。

公开(公告)号：US06258217B1

公开(公告)日：2001-07-10

申请号：US09406853

申请日：1999-09-29

Applicant: Edmond A. Richards ,  Paul R. Fournier ,  David Johnson ,  Abdul Lateef ,  David G. Lishan ,  Shinzo Onishi ,  Mark D. Kenney

Inventor： Edmond A. Richards ,  Paul R. Fournier ,  David Johnson ,  Abdul Lateef ,  David G. Lishan ,  Shinzo Onishi ,  Mark D. Kenney

IPC: C23C1435

CPC classification number: H01J37/3408 ,  C23C14/35 ,  H01J37/3455

Abstract: A sputtering system and magnet array for depositing metal and metal-reactive gas coatings onto a substrate. The magnet array is designed for use in a rotating magnetron. The magnet array includes a plurality of magnets disposed on a plate. The plurality of magnets is arranged such that a closed-loop magnetic path is formed. The shape of the magnetic path is a double-lobe structure that includes first and second lobes that are symmetric to one another about an axis in the plane of the plate that intersects the center of rotation of the plate. The magnets are arranged in several rows. A first row of magnets has a double-lobe structure that corresponds to the first and second lobes of the magnetic path. Second and third rows of magnets are arranged in the shape of rings inside the first and second lobes of the magnetic path magnetic path. The lobe structure of the magnetic path can be circular or elliptical in shape. Using this design, a metal or metal-reactive gas coating can be deposited on the surface of the substrate at a high rate.

Abstract translation: 用于将金属和金属反应性气体涂层沉积到衬底上的溅射系统和磁体阵列。 磁体阵列设计用于旋转磁控管。 磁体阵列包括设置在板上的多个磁体。 多个磁体被布置成使得形成闭环磁路。 磁路的形状是双瓣结构，其包括围绕板的平面中与轴的旋转中心相交的轴线彼此对称的第一和第二凸角。 磁铁排成几行。 第一排磁体具有对应于磁路的第一和第二凸角的双瓣结构。 第二和第三排磁体被布置成在磁路磁路的第一和第二凸角内的环形。 磁路的凸角结构可以是圆形或椭圆形。 使用这种设计，金属或金属反应性气体涂层可以高速沉积在基板的表面上。