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    Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    3.
    发明授权
    Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    杂环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07858970B2

    公开(公告)日：2010-12-28

    申请号：US11771196

    申请日：2007-06-29

    申请人： Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0053 ,  C09B57/08 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到一个或两个酰亚胺氮原子上的取代或未取代的杂环烷基环系。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二触点或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过200℃。

    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    4.
    发明申请
    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为N型半导体薄膜薄膜晶体管的配置控制N，N'-二烷基取代的基于萘二甲酸的四嵌段二胺二异氰酸酯化合物

    公开(公告)号：US20080135833A1

    公开(公告)日：2008-06-12

    申请号：US11567954

    申请日：2006-12-07

    申请人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    IPC分类号： H01L51/40 ,  C07D471/22

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    5.
    发明授权
    Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    配位控制的N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07804087B2

    公开(公告)日：2010-09-28

    申请号：US11567954

    申请日：2006-12-07

    申请人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    IPC分类号： H01L51/30 ,  C07D221/18

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    HETEROCYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    6.
    发明申请
    HETEROCYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    用于薄膜晶体管的N型半导体材料的杂环烷基取代的基于萘基的四羧酸二胺化合物

    公开(公告)号：US20090001354A1

    公开(公告)日：2009-01-01

    申请号：US11771196

    申请日：2007-06-29

    申请人： Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    IPC分类号： H01L51/30 ,  C07D487/04 ,  H01L51/40

    CPC分类号： H01L51/0053 ,  C09B57/08 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到一个或两个酰亚胺氮原子上的取代或未取代的杂环烷基环系。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二触点或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过200℃。

    Aligned liquid crystal layer containing azolium salts and process for increasing the tilt
    8.
    发明授权
    Aligned liquid crystal layer containing azolium salts and process for increasing the tilt 失效
    含有azolium盐的对准液晶层和增加倾斜的工艺

    公开(公告)号：US07097888B2

    公开(公告)日：2006-08-29

    申请号：US10736392

    申请日：2003-12-15

    申请人： Deepak Shukla ,  Thomas R. Welter ,  James F. Elman ,  Samir Y. Farid

    发明人： Deepak Shukla ,  Thomas R. Welter ,  James F. Elman ,  Samir Y. Farid

    IPC分类号： C09K19/58 ,  C09K19/56

    CPC分类号： C09K19/584 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1036

    摘要： Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the aligned liquid crystal layer contains an azolium salt represented by formula (I): whereinthe subscripts represent the ring positions and each X is independently N or C—R;each Z is independently N, N—R, C—(R)(R), O, S, SO2, SO, C═O, C═S, or C═NR;each R group is independently hydrogen or a substituent; andY is a charge balancing anion, which may be a separate moiety or part of an X, Z, or R;provided two or more X, Z and R groups may form a ring;provided the salt may be part of an oligomer or polymer.Such a film provides a predetermined increase in pre-tilt angle for use in liquid crystal devices.

    摘要翻译： 公开了一种多层膜，其包含具有取向的液晶层的基板，其中所述取向的液晶层包含由式（I）表示的唑鎓盐：其中下标表示环位置，并且每个X独立地为N或C-R; 每个Z独立地为N，N-R，C（R）（R），O，S，SO 2，SO，C-O，C-S或C-NR; 每个R基团独立地为氢或取代基; 并且Y是电荷平衡阴离子，其可以是X，Z或R的单独部分或部分; 提供两个或多个X，Z和R基团可以形成环; 条件是盐可以是低聚物或聚合物的一部分。 这样的薄膜提供用于液晶装置的预倾斜角度的预定增加。

    N-type semiconductor materials in thin film transistors and electronic devices
    10.
    发明授权
    N-type semiconductor materials in thin film transistors and electronic devices 有权
    薄膜晶体管和电子器件中的N型半导体材料

    公开(公告)号：US07649199B2

    公开(公告)日：2010-01-19

    申请号：US12101179

    申请日：2008-04-11

    申请人： Deepak Shukla ,  Thomas R. Welter

    发明人： Deepak Shukla ,  Thomas R. Welter

    IPC分类号： H01L51/00 ,  C07D471/02

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/42 ,  Y02E10/549 ,  Y10T428/31721

    摘要： A thin film transistor comprises a layer of organic semiconductor that comprises an N,N′-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.

    摘要翻译： 一种薄膜晶体管，包括一层有机半导体，其包含在其4位具有至少一个具有氟化取代基的环烷基的N，N'-1,4,5,8-萘四甲酸二酰亚胺，其采用赤道取向 环烷基的反式构型和环烷基的顺式构型的轴向取向。 这种晶体管可以是具有电介质层，栅电极，源电极和漏电极的场效应晶体管。 有机半导体材料的栅电极和薄膜都与介电层接触，源电极和漏电极均接触有机半导体材料的薄膜。