公开(公告)号：US10886912B2

公开(公告)日：2021-01-05

申请号：US16391436

申请日：2019-04-23

Applicant: Delta Electronics,Inc.

Inventor： Jianping Ying ,  Ming Wang ,  Xiaobo Huang ,  Jun Liu

IPC: H03K3/00 ,  H03K17/16

Abstract: The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.

公开(公告)号：US10587258B2

公开(公告)日：2020-03-10

申请号：US16445483

申请日：2019-06-19

Applicant: Delta Electronics, Inc.

Inventor： Jianping Ying ,  Ming Wang ,  Xiaobo Huang ,  Jun Liu ,  Zhiming Hu

IPC: H03K17/082 ,  H03K17/61 ,  H03K17/567

Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.

公开(公告)号：US10727664B2

公开(公告)日：2020-07-28

申请号：US16410151

申请日：2019-05-13

Applicant: Delta Electronics, Inc.

Inventor： Teng Liu ,  Yong Zeng ,  Jianping Ying ,  Ming Wang ,  Xiaobo Huang ,  Jun Liu

IPC: H02H7/122 ,  H03K17/082 ,  H05K7/20 ,  H02M1/088 ,  H02M1/36 ,  H02M7/537 ,  H03K17/08

Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.