公开(公告)号：US07489563B2

公开(公告)日：2009-02-10

申请号：US11668753

申请日：2007-01-30

申请人： Detlev Richter ,  Mirko Reissmann ,  Volker Zipprich-Rasch ,  Gert Köbernik ,  Uwe Augustin ,  Konrad Seidel ,  Andreas Kux ,  Hans Heitzer ,  Daniel-André Löhr ,  Sören Irmer

发明人： Detlev Richter ,  Mirko Reissmann ,  Volker Zipprich-Rasch ,  Gert Köbernik ,  Uwe Augustin ,  Konrad Seidel ,  Andreas Kux ,  Hans Heitzer ,  Daniel-André Löhr ,  Sören Irmer

IPC分类号： G11C7/00

CPC分类号： G11C16/10 ,  G11C16/26

摘要： A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predetermined number of bits of a first state is stored in a check section of the cell array. The check section is read by applying sense signals of different amplitudes, where in each case a secondary control word is obtained. By checking in each secondary control word the number of bits of the first state, the margins of the current sense signal amplitude towards the sense window limits may be checked and the sense signal amplitude may be adapted permanently to a sense window drift, so as to enhance the reliability of the memory device.

摘要翻译： 提供了一种存储器件，其包括能够在至少两个状态之间切换的存储器单元，其中用于检测当前状态的检测信号的阈值取决于存储器单元的数据内容。 平行于用户数据块，包括第一状态的预定位数的主控制字被存储在单元阵列的检查部分中。 通过应用不同幅度的感测信号来读取检查部分，其中在每种情况下获得辅助控制字。 通过检查每个辅助控制字中的第一状态的位数，可以检查当前感测信号向感应窗口极限的幅度的边缘，并且感测信号幅度可以永久地适应于感测窗漂移，从而 增强存储设备的可靠性。

公开(公告)号：US20080181012A1

公开(公告)日：2008-07-31

申请号：US11668753

申请日：2007-01-30

申请人： Detlev Richter ,  Mirko Reissmann ,  Volker Zipprich-Rasch ,  Gert Kobernik ,  Uwe Augustin ,  Konrad Seidel ,  Andreas Kux ,  Hans Heitzer ,  Daniel-Andre Lohr ,  Soren Irmer

发明人： Detlev Richter ,  Mirko Reissmann ,  Volker Zipprich-Rasch ,  Gert Kobernik ,  Uwe Augustin ,  Konrad Seidel ,  Andreas Kux ,  Hans Heitzer ,  Daniel-Andre Lohr ,  Soren Irmer

IPC分类号： G11C16/26

CPC分类号： G11C16/10 ,  G11C16/26

摘要： A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predetermined number of bits of a first state is stored in a check section of the cell array. The check section is read by applying sense signals of different amplitudes, where in each case a secondary control word is obtained. By checking in each secondary control word the number of bits of the first state, the margins of the current sense signal amplitude towards the sense window limits may be checked and the sense signal amplitude may be adapted permanently to a sense window drift, so as to enhance the reliability of the memory device.

摘要翻译： 提供了一种存储器件，其包括能够在至少两个状态之间切换的存储器单元，其中用于检测当前状态的检测信号的阈值取决于存储器单元的数据内容。 平行于用户数据块，包括第一状态的预定位数的主控制字被存储在单元阵列的检查部分中。 通过应用不同幅度的感测信号来读取检查部分，其中在每种情况下获得辅助控制字。 通过检查每个辅助控制字中的第一状态的位数，可以检查当前感测信号向感应窗口极限的幅度的边缘，并且感测信号幅度可以永久地适应于感测窗漂移，从而 增强存储设备的可靠性。