公开(公告)号：US20240154045A1

公开(公告)日：2024-05-09

申请号：US18549016

申请日：2022-03-03

申请人： Diamfab ,  Centre National De La Recherche Scientifique ,  Institut Polytechnique de Grenoble ,  Universite de Grenoble Alpes

发明人： Gauthier Chicot ,  Khaled Driche ,  David Eon ,  Etienne Gheeraert ,  Cédric Masante ,  Julien Pernot

IPC分类号： H01L29/92 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24

CPC分类号： H01L29/92 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24

摘要： A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pin junctions.