公开(公告)号：US5689212A

公开(公告)日：1997-11-18

申请号：US562153

申请日：1995-11-22

申请人： Didier Floriot ,  Sylvain Delage ,  Pascal Roux ,  Juan Obregon

发明人： Didier Floriot ,  Sylvain Delage ,  Pascal Roux ,  Juan Obregon

IPC分类号： H01L29/737 ,  H03F3/60 ,  H03F3/68 ,  H03F3/195

CPC分类号： H03F3/602 ,  H01L29/7371 ,  H03F3/605

摘要： Disclosed is a novel topology of monolithic, microwave amplifiers with high integration. This is a more compact topology, divided into a two-level or tree-like structure in which the division of the input signal is done firstly on each transistor Tij and, secondly, on each of the elementary transistors tijk of the transistors Tij. More specifically, the input line LE is divided into different basic lines li, each line li supplying lines lij distributed on either side of said lines li, a line lij then supplying a power transistor Tij. Application to microwave amplifiers.

摘要翻译： 公开了具有高集成度的单片微波放大器的新颖拓扑。 这是一种更紧凑的拓扑，分为两级或树状结构，其中首先在每个晶体管Tij上完成输入信号的划分，其次在晶体管Tij的每个基本晶体管tijk上进行。 更具体地说，输入线LE被分成不同的基线L1，每条线路li提供分布在所述线路li的任一侧的线路lij，然后提供功率晶体管Tij的线路lij。 应用于微波放大器。

公开(公告)号：US06858509B2

公开(公告)日：2005-02-22

申请号：US10149433

申请日：2000-12-15

申请人： Sylvain Delage ,  Simone Cassette ,  Didier Floriot ,  Arnaud Girardot

发明人： Sylvain Delage ,  Simone Cassette ,  Didier Floriot ,  Arnaud Girardot

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.

摘要翻译： 一种收集器异质结双极晶体管，包括堆叠在基板上的发射极层，基极层和集电极层。 在该晶体管中，基极 - 发射极结的表面积比基极 - 集电极结的表面积小。 此外，基层的材料表现出离子注入的电导率的灵敏度低于发射极层的材料对相同的离子注入的电导率的灵敏度。

公开(公告)号：US06559534B1

公开(公告)日：2003-05-06

申请号：US09720822

申请日：2001-01-12

申请人： Didier Floriot ,  Sylvain DeLage ,  Simone Cassette ,  Jean-Pascal Duchemin

发明人： Didier Floriot ,  Sylvain DeLage ,  Simone Cassette ,  Jean-Pascal Duchemin

IPC分类号： H01L2310

CPC分类号： H01L23/3672 ,  H01L23/36 ,  H01L23/3732 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thermal capacitor component which includes, on a substrate, a stack of different layers defined in the form of a mesa terminating at its upper part in an electrical contact layer, which layer is coated with an electrically and thermally conducting layer surmounted by a heat sink element in contact with the conducting layer. The heat sink element has a plane shape. In addition, the component has at least one pad including another stack of layers which is also coated with an electrically and thermally conducting layer. The heat sink element is also in contact with the conducting layer of this stack so as to conduct the heat from the heat sink element into the substrate. Such a thermal capacitor may find application in the cooling of semiconductor components.

摘要翻译： 一种热电容器部件，其在基板上包括以台状形式定义的不同层的堆叠，其在其上部终止于电接触层中，所述层涂覆有被导热层覆盖的导电和导热层 元件与导电层接触。 散热元件具有平面形状。 此外，该部件具有至少一个垫，该垫包括另外的层叠层，其也涂覆有导电和导热层。 散热元件也与该堆叠的导电层接触，以将热量从散热元件传导到衬底中。 这种热电容器可用于半导体部件的冷却。