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    Method for producing silanes
    3.
    发明授权
    Method for producing silanes 失效
    硅烷生产方法

    公开(公告)号：US07323155B2

    公开(公告)日：2008-01-29

    申请号：US10432129

    申请日：2001-11-09

    申请人： Stephan Klein ,  Hans-Dieter Block ,  Hans-Joachim Leimkühler ,  Werner Dick ,  Dirk Müller ,  Johannes-Peter Schäfer

    发明人： Stephan Klein ,  Hans-Dieter Block ,  Hans-Joachim Leimkühler ,  Werner Dick ,  Dirk Müller ,  Johannes-Peter Schäfer

    IPC分类号： C01B33/08

    CPC分类号： C01B33/043 ,  C01B33/10773 ,  Y02P20/127

    摘要： The invention relates to a method of producing silane or hydrochlorosilanes by disproportionation of a higher chlorinated hydrochlorosilane or a mixture of said hydrochlorosilanes in the presence of a catalyst. Before the catalyst is used, it is a) washed with hyper-pure water in one or several steps; b) transferred in the water-moist state to the reactor in which the disproportionation is to proceed; c) treated in the reactor with boiling methanol or rinsed with anhydrous methanol; and d) the methanol is removed from the catalyst by evacuation and/or stripping with inert gas. The invention further relates to a method for treating disproportionation catalysts.

    摘要翻译： 本发明涉及通过在催化剂存在下，通过歧化较高氯代氢氯代硅烷或所述氢氯硅烷的混合物来生产硅烷或氢氯硅烷的方法。 在使用催化剂之前，a）用一个或多个步骤用超纯水洗涤; b）在潮湿状态下转移到进行歧化的反应堆; c）在反应器中用沸腾的甲醇处理或用无水甲醇冲洗; 和d）通过用惰性气体抽空和/或汽提将甲醇从催化剂中除去。 本发明还涉及一种用于处理歧化催化剂的方法。

    Method for production of high purity silicon
    5.
    发明授权
    Method for production of high purity silicon 失效

    公开(公告)号：US06887448B2

    公开(公告)日：2005-05-03

    申请号：US10450125

    申请日：2001-11-21

    申请人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    发明人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    IPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/18 ,  C01B33/02

    CPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P20/127 ,  Y02P70/521

    摘要： The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl4), hydrogen (H2) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl3) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl4 and a partial stream, essentially comprising SiHCl3, c) disproportionation of the SiHCl3-containing partial stream to give SiCl4 and SiH4, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl3 is introduced into a first reaction zone, the lower boiling SiH4-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of −25° C. to 50° C., the non-condensing SiH4-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH4 is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH4 to give high purity silicon.