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    DEVICE CHIP MANUFACTURING METHOD
    1.
    发明申请
    DEVICE CHIP MANUFACTURING METHOD 有权

    公开(公告)号：US20250087490A1

    公开(公告)日：2025-03-13

    申请号：US18820928

    申请日：2024-08-30

    Applicant: DISCO CORPORATION

    Inventor： Taro ARAKAWA

    IPC: H01L21/268 ,  H01L21/78

    Abstract: A device chip manufacturing method includes: forming shield tunnels each having a fine pore and an amorphous region surrounding the fine pore along the planned division lines, by irradiating the wafer from a back surface side with the laser beam having a wavelength transmissive to the wafer in a condition in which a focal point of the laser beam is positioned inside the wafer; and dividing the wafer along the planned division lines where the shield tunnels are formed, by applying an external force to the wafer. Forming the shield tunnels includes setting a beam spot, on the front surface of the wafer, of a light of the laser beam which has passed through the wafer and has reached the front surface of the wafer, to be equal to or smaller than a width of the planned division line.

    OPTICAL DEVICE AND PROCESSING METHOD OF THE SAME
    5.
    发明申请
    OPTICAL DEVICE AND PROCESSING METHOD OF THE SAME 审中-公开
    光学装置及其处理方法

    公开(公告)号：US20140014976A1

    公开(公告)日：2014-01-16

    申请号：US13937976

    申请日：2013-07-09

    Applicant: Disco Corporation

    Inventor： Takashi OKAMURA ,  Taro ARAKAWA

    IPC: H01L33/20

    CPC classification number: H01L33/20 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095

    Abstract: An optical device including: a rectangular front side having a light-emitting layer; a rectangular rear side parallel to the front side; and first to fourth lateral sides adapted to connect the front and rear sides, in which the first lateral side is inclined by a first angle with respect to a perpendicular of the front side, and the second lateral side opposed to the first lateral side is inclined by a second angle with respect to the perpendicular, and the third lateral side is inclined by a third angle with respect to the perpendicular, and the fourth lateral side opposed to the third lateral side is inclined by a fourth angle with respect to the perpendicular.

    Abstract translation: 一种光学装置，包括：具有发光层的矩形前侧; 平行于前侧的矩形后侧; 以及第一至第四侧面，其适于连接前侧和后侧，其中第一侧面相对于前侧的垂直线倾斜第一角度，并且与第一侧面相对的第二侧向侧倾斜 相对于垂直方向具有第二角度，并且第三侧面相对于垂直方向倾斜第三角度，并且与第三侧面相对的第四侧面相对于垂直方向倾斜第四角度。

    WAFER PROCESSING METHOD
    9.
    发明申请
    WAFER PROCESSING METHOD 审中-公开

    公开(公告)号：US20200266090A1

    公开(公告)日：2020-08-20

    申请号：US16752943

    申请日：2020-01-27

    Applicant: DISCO CORPORATION

    Inventor： Shigenori HARADA ,  Minoru MATSUZAWA ,  Hayato KIUCHI ,  Yoshiaki YODO ,  Taro ARAKAWA ,  Masamitsu AGARI ,  Emiko KAWAMURA ,  Yusuke FUJII ,  Toshiki MIYAI ,  Makiko OHMAE

    IPC: H01L21/683 ,  H01L21/78 ,  H01L21/268 ,  H01L23/544 ,  B23K26/359

    Abstract: A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form division grooves in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet in each region of the polyester sheet corresponding to each device chip, pushing up each device chip from the polyester sheet side to pick up each device chip from the polyester sheet.

    WAFER PROCESSING METHOD
    10.
    发明申请
    WAFER PROCESSING METHOD 审中-公开

    公开(公告)号：US20200235011A1

    公开(公告)日：2020-07-23

    申请号：US16743176

    申请日：2020-01-15

    Applicant: DISCO CORPORATION

    Inventor： Shigenori HARADA ,  Minoru MATSUZAWA ,  Hayato KIUCHI ,  Yoshiaki YODO ,  Taro ARAKAWA ,  Masamitsu AGARI ,  Emiko KAWAMURA ,  Yusuke FUJII ,  Toshiki MIYAI ,  Makiko OHMAE

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/683

    Abstract: A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form division grooves in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet in each region of the polyester sheet corresponding to each device chip, pushing up each device chip from the polyester sheet side to pick up each device chip from the polyester sheet.

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