公开(公告)号：US07960221B2

公开(公告)日：2011-06-14

申请号：US12755920

申请日：2010-04-07

申请人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

发明人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

摘要翻译： 一种薄膜晶体管基板，其中薄膜晶体管（TFT）的源极和漏极之间的电子的移动面积最小化，电子的移动距离增加，并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同，使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此，可以将由于光的电子俘获现象引起的截止电流最小化。

公开(公告)号：US20100197086A1

公开(公告)日：2010-08-05

申请号：US12755920

申请日：2010-04-07

申请人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

发明人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

摘要翻译： 一种薄膜晶体管基板，其中薄膜晶体管（TFT）的源极和漏极之间的电子的移动面积最小化，电子的移动距离增加，并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同，使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此，可以将由于光的电子俘获现象引起的截止电流最小化。

公开(公告)号：US20070181877A1

公开(公告)日：2007-08-09

申请号：US11496320

申请日：2006-07-31

申请人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

发明人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

摘要翻译： 一种薄膜晶体管基板，其中薄膜晶体管（TFT）的源极和漏极之间的电子的移动面积最小化，电子的移动距离增加，并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同，使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此，可以将由于光的电子俘获现象引起的截止电流最小化。

公开(公告)号：US07719008B2

公开(公告)日：2010-05-18

申请号：US11496320

申请日：2006-07-31

申请人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

发明人： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

IPC分类号： H01L31/20

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

摘要翻译： 一种薄膜晶体管基板，其中薄膜晶体管（TFT）的源极和漏极之间的电子的移动面积最小化，电子的移动距离增加，并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同，使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此，可以将由于光的电子俘获现象引起的截止电流最小化。