公开(公告)号：US06841338B2

公开(公告)日：2005-01-11

申请号：US10173375

申请日：2002-06-17

申请人： Dae-youp Lee ,  Jeong-lim Nam ,  Do-yul Yoo ,  Jeung-woo Lee

发明人： Dae-youp Lee ,  Jeong-lim Nam ,  Do-yul Yoo ,  Jeung-woo Lee

IPC分类号： C08F212/14 ,  G03F1/14 ,  G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0392 ,  G03F1/50

摘要： A photoresist composition may include formulas 1 and 2:  where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01−0.8, and m/(m+n) is 1−[n/(m+n)],  where r is an integer between 8-40. A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.

摘要翻译： 光致抗蚀剂组合物可以包括式1和2：其中R是缩醛基或叔丁氧基羰基（t-BOC）基团，n和m是整数，n /（m + n）是0.01-0.8，m / （m + n）是1- [n /（m + n）]，其中r是8-40之间的整数。一种用于形成光致抗蚀剂图案的方法可以包括在半导体衬底上形成光致抗蚀剂层并曝光和显影光致抗蚀剂 层，其使用包括具有约100％的光透射率的第一区域和具有约10％至约30％的透光率的第二区域的掩模图案。

公开(公告)号：US20050002034A1

公开(公告)日：2005-01-06

申请号：US10881201

申请日：2004-06-29

申请人： Do-yul Yoo

发明人： Do-yul Yoo

IPC分类号： H01L21/027 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An overlay key includes a main scale and a vernier scale, which traverse each other forming a plurality of crossings. The main scale includes a first main sub-scale and a second main sub-scale, which are separated from each other or at least partially overlap each other. The first and second main sub-scales extend in different directions such that they are not parallel to each other. The vernier scale includes a first vernier sub-scale and a second vernier sub-scale, which are separated from each other or at least partially overlap each other. The first and second vernier sub-scales extend in different directions such that they are not parallel to each other. Two measured crossings are obtained when the main scale and the vernier scale cross each other in a measured position. Then, overlay accuracy is measured from coordinate differences between reference crossings and the measured crossings.

摘要翻译： 覆盖键包括主刻度和游标，横向彼此形成多个交叉。 主标尺包括彼此分离或至少部分地彼此重叠的第一主子刻度和第二主子刻度。 第一和第二主子标尺在不同的方向上延伸，使得它们彼此不平行。 游标刻度包括彼此分离或至少部分地彼此重叠的第一游标子尺度和第二游标子尺度。 第一和第二游标子尺度在不同的方向上延伸，使得它们彼此不平行。 当主刻度和游标刻度在测量位置彼此交叉时，获得两个测量的交叉。 然后，根据参考交叉点和测量的交叉点之间的坐标差来测量覆盖精度。

公开(公告)号：US07236245B2

公开(公告)日：2007-06-26

申请号：US10881201

申请日：2004-06-29

申请人： Do-yul Yoo

发明人： Do-yul Yoo

IPC分类号： G01B11/00

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An overlay key includes a main scale and a vernier scale, which traverse each other forming a plurality of crossings. The main scale includes a first main sub-scale and a second main sub-scale, which are separated from each other or at least partially overlap each other. The first and second main sub-scales extend in different directions such that they are not parallel to each other. The vernier scale includes a first vernier sub-scale and a second vernier sub-scale, which are separated from each other or at least partially overlap each other. The first and second vernier sub-scales extend in different directions such that they are not parallel to each other. Two measured crossings are obtained when the main scale and the vernier scale cross each other in a measured position. Then, overlay accuracy is measured from coordinate differences between reference crossings and the measured crossings.

摘要翻译： 覆盖键包括主刻度和游标，横向彼此形成多个交叉。 主标尺包括彼此分离或至少部分地彼此重叠的第一主子刻度和第二主子刻度。 第一和第二主子标尺在不同的方向上延伸，使得它们彼此不平行。 游标刻度包括彼此分离或至少部分地彼此重叠的第一游标子尺度和第二游标子尺度。 第一和第二游标子尺度在不同的方向上延伸，使得它们彼此不平行。 当主刻度和游标刻度在测量位置彼此交叉时，获得两个测量的交叉。 然后，根据参考交叉点和测量的交叉点之间的坐标差来测量覆盖精度。