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1.发明授权
公开(公告)号：US6150224A
公开(公告)日：2000-11-21
申请号：US393944
申请日：1999-09-10
IPC分类号： H01L21/331 , H01L29/732 , H01L29/737 , H01L21/8222
CPC分类号： H01L29/66287 , H01L29/66242
摘要： The invention relates to the manufacture of a so-called differential bipolar transistor comprising a base (1A), an emitter (2) and a collector (3), the base (1A) being formed by applying a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body (10) where it forms the (monocrystalline) base (1A), and which semiconducting layer (1) borders, outside said monocrystalline part, on a non-monocrystalline part (4, 8) of the semiconductor body (10) where it forms a (non-monocrystalline) connecting region (1B) of the base (1A). The non-monocrystalline part (4, 8) of the semiconductor body (10) is obtained by covering the semiconductor body (10) with a mask (20) and replacing on either side thereof a part (8) of the semiconductor body (10) by an electrically insulating region (8) and by providing this, prior to the application of the semiconducting layer (1) with a polycrystalline semiconducting layer (4). The known method, in which an aperture is etched above the collector (3) after deposition of the polycrystalline layer (4), is relatively laborious. In a method in accordance with the invention, the polycrystalline layer (4) is selectively provided on the electrically insulating region (8), in which process use is made of the mask (20) to form the electrically insulating region (8). This method is less laborious than the known method. In addition, the resultant transistors have excellent properties and their dimensions may be very small. Preferably, both in the manufacture of the insulating region (8), preferably an oxide-filled groove (8), and in the process of selectively applying the polycrystalline layer (4) to the insulating region, use is made of a deposition step followed by a chemico-mechanical polishing step.
摘要翻译： 本发明涉及一种所谓的差分双极型晶体管的制造，所述差分双极晶体管包括基极（1A），发射极（2）和集电极（3），所述基极（1A）通过施加掺杂的半导体层 局部地邻接在半导体本体（10）的单晶部分（3）上，其形成（单晶）基底（1A），并且该半导体层（1）在非单晶部分（4） ，8），其形成所述基座（1A）的（非单晶）连接区域（1B）。 半导体本体（10）的非单晶部分（8）通过用掩模（20）覆盖半导体本体（10）并在其任一侧替换半导体本体（10）的一部分（8） ），并且通过在将半导体层（1）施加到多晶半导体层（4）之前提供该绝缘区域（8）。 在沉积多晶层（4）之后，在集电体（3）上方蚀刻孔径的已知方法相当费力。 在根据本发明的方法中，多晶层（4）选择性地设置在电绝缘区域（8）上，其中使用掩模（20）来形成电绝缘区域（8）。 这种方法比已知方法费力。 此外，所得的晶体管具有优异的性能，其尺寸可能非常小。 优选地，在绝缘区域（8）的制造中，优选地是氧化物填充的凹槽（8），并且在将多晶层（4）选择性地施加到绝缘区域的过程中，使用随后的沉积步骤 通过化学机械抛光步骤。
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公开(公告)号：US06100152A
公开(公告)日：2000-08-08
申请号：US387629
申请日：1999-08-31
IPC分类号： H01L21/22 , H01L21/223 , H01L21/225 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/732 , H01L29/737 , H01L27/082
CPC分类号： H01L29/66287 , H01L29/66242 , H01L21/223 , H01L21/2252
摘要： The invention relates to a method of manufacturing a discrete or integrated bipolar transistor comprising a base (1A), an emitter (2) and a collector (3). The base (1A) and a connecting region (1B) of the base (1A) are formed by providing a semiconductor body (10) with a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body which forms the collector (3). Outside said base, the layer (1) borders on a non-monocrystalline part (4) of the semiconductor body (10) and forms a non-monocrystalline connecting region (1B) of the base (1A). By means of a mask (5), the doping concentration of the layer (1) outside the mask (5) is selectively increased, resulting in a highly conducting connection region (1B) and a very fast transistor. In the known method, an ion implantation is used for this purpose. In a method in accordance with the invention, this is achieved by bringing the semiconductor body (10) into contact with a gaseous substance (40) comprising a doping element, and heating the semiconductor body (10) in such a manner that the doping elements penetrate into the semiconducting layer (1). Such a method surprisingly results in a much faster transistor. It has been found that this enables, on the one hand, a much smaller diffusion in the thickness direction of the doping of the base (1A) to be achieved, which results in a much faster transistor, particularly, if the base (1A) contains SiGe. On the other hand, the lateral diffusion from the connecting region (1B) to the base (1A) is particularly strongly suppressed. This too has a beneficial effect on the speed of the transistor. The supply of the gaseous substance (40), for example diborane, preferably takes place at a temperature between 800 and 950.degree. C. for one to several minutes. Subsequently, a slightly longer diffusion step can be carried out, for example, at 850.degree. C.
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