摘要:
Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
摘要:
A transflective type LCD device includes a substrate, gate and data lines perpendicularly arranged to each other to define unit pixel regions each including transmitting and reflective parts, a plurality of thin film transistors formed adjacent to crossing portions of the gate and data lines, a passivation layer formed on the substrate including the thin film transistors, a plurality of pixel electrodes formed on the passivation layer in each unit pixel region, a plurality of first reflective plates electrically connected with the pixel electrodes and formed in the reflective parts, and second reflective plates formed on a predetermined portions of the substrate corresponding to the boundaries between the transmitting parts and the reflective parts.
摘要:
An in-plane-switching mode liquid crystal display device is disclosed. The LCD device includes: first and second substrates opposite to each other; a liquid crystal layer interposed between the first and second substrates; a passivation film formed on the first substrate in which a thin film transistor is disposed; pixel and common electrodes arranged alternately with each other; and a first alignment film formed on the pixel and common electrodes. The liquid crystal layer and the passivation film are formed to have lower non-resistances than that of the first alignment film.
摘要:
A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
摘要:
A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage-electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
摘要:
Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
摘要:
Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
摘要:
A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
摘要:
Disclosed are a reflective and transflective liquid crystal display device and its manufacturing method, which can raise light efficiency by removing a depressed part in a reflective device without forming a capacitor contact hole in a storage capacitor. The reflective liquid crystal display device includes: a plurality of gate lines and data lines intersecting on a first substrate, the gate line and the data line defining pixel areas; a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode; a capacitor lower electrode of a storage capacitor formed on the same plane as the gate line; an capacitor upper electrode formed integrally with the drain electrode on the capacitor lower electrode; a first insulation film inserted between the capacitor upper electrode and the capacitor lower electrode; and a thin film transistor array substrate connected with the drain electrode and including the reflective electrode formed at the pixel area.
摘要:
A liquid crystal display device includes a plurality of gate lines on a substrate, a plurality of data lines on the substrate orthogonal to the plurality of gate lines to define a plurality of pixel regions, at least one thin film transistor at crossing points of the plurality of gate lines and the plurality of data lines, a passivation film on a surface of the substrate and the at least one thin film transistor, and a pixel electrode connected to the at least one thin film transistor, wherein corners of the pixel electrode are arcuate shaped such that a distance between adjacent corners of adjacent pixel electrodes is larger than a distance between adjacent contact sides of the adjacent pixel electrodes.