摘要:
A duty cycle correction circuit includes a duty correction block configured to generate a first pre-corrected signal and a second pre-corrected signal in response to a duty code and an input signal; a duty-corrected signal generation block configured to generate a duty-corrected signal in response to a first select signal, a second select signal, the first pre-corrected signal and the second pre-corrected signal; and a control block configured to generate the duty code, the first select signal and the second select signal in response to the duty-corrected signal and the input signal.
摘要:
A memory device having a duty ratio corrector which can reduce power consumption by blocking current paths between output terminals and a ground terminal by applying input signals for turning off switching devices for generating an auxiliary voltage for correcting a duty ratio at an initial stage, and which can improve an operational speed by changing the auxiliary voltage from a predetermined voltage, not 0V, to a target voltage.
摘要:
The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.
摘要:
A delay locked loop (DLL) circuit is disclosed. The DLL circuit includes a first delay locked loop (DLL) configured to receive a plurality of first clock signals, delay each of the first clock signals by a predetermined period of time in response to a first control signal, and generate a plurality of first internal clock signals and a second delay locked loop (DLL) configured to receive the first internal clock signals, delay the first internal clock signals by a predetermined period of time in response to a second control signal, and generate a plurality of second internal clock signals.
摘要:
A data output circuit in a semiconductor memory apparatus includes a first data driving unit configured to generate a first driving data at a first timing, a first buffering unit configured to generate a first output data by buffering the first driving data, a second data driving unit configured to generate a second driving data at a second timing that is different from the first timing, and a second buffering unit configured to generate a second output data by buffering the second driving data.
摘要:
A DLL circuit includes a clock selection control unit configured to generate a clock selection signal on the basis of a phase difference between a reference clock and a feedback clock and, after the clock selection signal is generated, to generate an initialization signal. A delay control unit, when the initialization signal is enabled, transfers an initial voltage to be generated by dividing an external power supply voltage to a delay unit as a control voltage, and controls a delay operation of a delay reference clock to be selected on the basis of the clock selection signal.
摘要:
A delayed locked loop (DLL) circuit is provided which includes a delay line for including a plurality of delay elements, and delaying an internal clock signal generated by buffering external clock signals by a first delay period, an internal delay for delaying an output signal of the delay line by a second delay period determined by modeling delay elements contained in a DRAM, and generating a feedback clock signal, a phase detector for generating an enable signal enabled when a phase difference between the feedback clock signal and a reference clock signal is contained in a predetermined period, and outputs the enable signal, a delay-period controller configured to generate, in response to the enable signal, first and second control signals for adjusting a counter output signal corresponding to at least one delay element selected from among the delay elements, a counter for receiving the first and second control signals, and generating a counter output signal corresponding to the at least one delay element, and a decoder for decoding the counter output signal, and generating the decoding signal, wherein the decoding signal indicates an enable state of the at least one delay element and adjusts the first delay period.
摘要:
A memory device having a duty ratio corrector which can reduce power consumption by blocking current paths between output terminals and a ground terminal by applying input signals for turning off switching devices for generating an auxiliary voltage for correcting a duty ratio at an initial stage, and which can improve an operational speed by changing the auxiliary voltage from a predetermined voltage, not 0V, to a target voltage.
摘要:
A clock system produces a high-speed clock signal based on a low-speed clock signal inputted from the outside through the use of a frequency amplifier therein in order to thereby reduce power consumption at a clock buffer. In order to perform the above process, the clock system is composed of an external clock source for producing a clock signal having a frequency of f, a plurality of Rambus DRAMs and a controller, which are synchronized by the clock signal derived from the external clock source. By using the clock system, it is possible to reduce power consumption at the clock buffer and to decrease occurrence of a high frequency noise at a clock pin, and thus, a high qualified system design is also accomplished.
摘要:
A clock signal delay circuit includes a variable delay unit, a delay unit, a phase detection block, a control clock output block, and a delay control unit. The variable delay unit controls a delay amount of a reference clock signal based on a delay control signal and provides a delayed clock signal based thereon. The delay unit delays the delayed clock signal and provides a feedback clock signal based thereon. The phase detection block detects a phase difference between the feedback clock signal and the reference clock signal and provides a detected phase difference based thereon. The control clock output block provides a control clock signal based on the detected phase difference. The delay control unit generates the delay control signal based on the detected phase difference and in response to the control clock signal.