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公开(公告)号：US20070003863A1
公开(公告)日：2007-01-04
申请号：US11301049
申请日：2005-12-12
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0387 , Y10S430/115
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer mixture including a first polymer that includes one or more of the following monomeric units wherein A is a bivalent radical selected from the group consisting of carbonyl, oxy, alkylene, fluoroalkylene, phenyldioxy, and any combination thereof; R1 and R2 are each independently a bivalent radical selected from the group consisting of an alkylene, an arylene, and any combination thereof; and x, y, and z are 0 or integers; and a second polymer including an aryl group; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译： 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组合物包括：（a）包含第一聚合物的聚合物混合物，其包含一种或多种下列单体单元，其中A是选自羰基，氧基，亚烷基，氟代亚烷基，苯基二氧基， 及其任何组合; R 1和R 2各自独立地为选自亚烷基，亚芳基及其任何组合的二价基团; x，y和z为0或整数; 和包含芳基的第二聚合物; （b）交联组分; 和（c）酸催化剂。
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公开(公告)号：US20070059635A1
公开(公告)日：2007-03-15
申请号：US11324950
申请日：2006-01-04
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, alkyl, aryl, allyl, halo, or any combination thereof; R3 and R4 may each independently be hydrogen, a crosslinking functionality, a chromophore, or any combination thereof; R5 and R6 may each independently be hydrogen or an alkoxysilane group; R7 may each independently be hydrogen, alkyl, aryl, allyl, or any combination thereof; and n may be a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译： 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有式（I）的单体单元的聚合物的聚合物组分，其中R 1和R 2各自 独立地是氢，羟基，烷基，芳基，烯丙基，卤素或其任何组合; R 3和R 4可各自独立地为氢，交联官能团，发色团或其任何组合; R 5和R 6可各自独立地为氢或烷氧基硅烷基; R 7可各自独立地为氢，烷基，芳基，烯丙基或其任何组合; n可以是正整数; （b）交联组分; 和（c）酸催化剂。
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公开(公告)号：US20070072111A1
公开(公告)日：2007-03-29
申请号：US11325281
申请日：2006-01-04
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译： 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有式（I）的单体单元的聚合物的聚合物组分，其中R 1和R 2各自 独立地是氢，羟基，C 1-10烷基，C 6-10芳基，烯丙基或卤素; R 3和R 4可以各自独立地为氢，交联官能团或发色团; R 5和R 6可各自独立地为氢或具有式（II）结构的烷氧基硅氧烷，其中R 5和 和R 6是烷氧基硅烷; 其中R 8，R 9和R 10可各自独立地为氢，烷基或芳基; x为0或正整数; R 7可以是氢，C 1-10烷基，C 6-10芳基或烯丙基; 并且n是正整数; （b）交联组分; 和（c）酸催化剂。
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公开(公告)号：US20060269867A1
公开(公告)日：2006-11-30
申请号：US11348063
申请日：2006-02-06
IPC分类号： G03C1/00
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: a) a polymer component, including a first monomeric unit and a second monomeric unit, wherein both the first monomeric unit and the second monomeric unit include an aromatic group, and wherein at least one of the first monomeric unit and the second monomeric unit includes a phenol group; b) a crosslinking component; and c) an acid catalyst.
摘要翻译： 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组合物包括：a）聚合物组分，包括第一单体单元和第二单体单元，其中第一单体单元和第二单体单元都包括芳族基团，并且其中第一单体单元 单元，第二单体单元包括苯酚基团; b）交联组分; 和c）酸催化剂。
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公开(公告)号：US20060251990A1
公开(公告)日：2006-11-09
申请号：US11348203
申请日：2006-02-06
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. In some embodiments of the present invention, antireflective hardmask compositions include: a) a polymer component, which includes one or more of the monomeric units of Formulas I, II and III: b) a crosslinking component; and c) an acid catalyst.
摘要翻译： 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 在本发明的一些实施方案中，抗反射硬掩模组合物包括：a）聚合物组分，其包含一种或多种式I，II和III的单体单元：b）交联组分; 和c）酸催化剂。
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