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1.发明申请System and method for measuring dimension of patterns formed on photomask 失效用于测量在光掩模上形成的图案的尺寸的系统和方法公开(公告)号：US20060066878A1
公开(公告)日：2006-03-30
申请号：US11151742
申请日：2005-06-13
IPC分类号： G01B11/04
摘要： A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.
摘要翻译： 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，其上放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。
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2.发明授权System and method for measuring dimension of patterns formed on photomask 失效用于测量在光掩模上形成的图案的尺寸的系统和方法公开(公告)号：US07369254B2
公开(公告)日：2008-05-06
申请号：US11151742
申请日：2005-06-13
申请人： Dong-Gun Lee , Seong-Woon Choi , Sang-Yong Yu , Seong-Yong Moon , Byung-Gook Kim
发明人： Dong-Gun Lee , Seong-Woon Choi , Sang-Yong Yu , Seong-Yong Moon , Byung-Gook Kim
IPC分类号： G01N21/00
摘要： A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.
摘要翻译： 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。
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3.发明申请公开(公告)号：US20060051684A1
公开(公告)日：2006-03-09
申请号：US11145985
申请日：2005-06-07
CPC分类号： G03F1/36
摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.
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4.发明授权Photo-mask having exposure blocking region and methods of designing and fabricating the same 有权具有曝光阻挡区域的光掩模及其设计和制造方法公开(公告)号：US07560198B2
公开(公告)日：2009-07-14
申请号：US11145985
申请日：2005-06-07
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.
摘要翻译： 光掩模在主区域中具有主掩模图案，在周边区域中具有浓度校正图案，以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。 曝光阻挡图案被配置为防止将密度校正图案转录到晶片。 光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的，提供至少指定主掩模图案的设计数据，并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据 层。 曝光数据包括指定曝光阻挡图案的信息，由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。
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