公开(公告)号：US07977223B2

公开(公告)日：2011-07-12

申请号：US12431576

申请日：2009-04-28

申请人： Dong-Jin Byun ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Jong-Hyeob Baek

发明人： Dong-Jin Byun ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Jong-Hyeob Baek

IPC分类号： H01L21/265

CPC分类号： H01L21/0237 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L33/007

摘要： A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

摘要翻译： 公开了一种通过离子注入形成氮化物半导体的方法和包括其的电子器件。 在该方法中，以大于1E17离子/ cm 2至5E18离子/ cm 2以下的离子注入剂量和30〜50keV的离子注入能量，在基板上形成由线/空间图案构成的离子注入区域， 并且通过外延横向过度生长在衬底上生长金属氮化物薄膜，从而减少金属氮化物薄膜中的晶格缺陷。 因此，电子设备具有提高的效率。

公开(公告)号：US08470519B2

公开(公告)日：2013-06-25

申请号：US13024678

申请日：2011-02-10

申请人： Dong-Jin Byun ,  Sam-Seok Jang ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Sang-Il Kim ,  Do-Han Lee

发明人： Dong-Jin Byun ,  Sam-Seok Jang ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Sang-Il Kim ,  Do-Han Lee

IPC分类号： G03F7/36

CPC分类号： G03F7/42

摘要： Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

摘要翻译： 公开了去除光致抗蚀剂图案的方法，其包括将光照射到其上形成有光刻胶图案的基板上并注入预定的掺杂剂，使得基板的温度升高至等于或高于能够去除的温度 光致抗蚀剂图案，并且通过使用用于将光照射到基板上的简单工艺几乎可以完全去除在基板上形成的光致抗蚀剂图案，使得基板的温度升高到等于或高于能够 光刻胶图案。

公开(公告)号：US20110200951A1

公开(公告)日：2011-08-18

申请号：US13024678

申请日：2011-02-10

申请人： Dong-Jin Byun ,  Sam-Seok Jang ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Sang-Il Kim ,  Do-Han Lee

发明人： Dong-Jin Byun ,  Sam-Seok Jang ,  Bum-Joon Kim ,  Jung-Geun Jhin ,  Sang-Il Kim ,  Do-Han Lee

IPC分类号： G03F7/00

CPC分类号： G03F7/42

摘要： Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

摘要翻译： 公开了去除光致抗蚀剂图案的方法，其包括将光照射到其上形成有光刻胶图案的基板上并注入预定的掺杂剂，使得基板的温度升高至等于或高于能够去除的温度 光致抗蚀剂图案，并且通过使用用于将光照射到基板上的简单工艺几乎可以完全去除在基板上形成的光致抗蚀剂图案，使得基板的温度升高到等于或高于能够 光刻胶图案。