公开(公告)号：US06689631B2

公开(公告)日：2004-02-10

申请号：US10014884

申请日：2001-12-14

Applicant: Dong-hoon Chang

Inventor： Dong-hoon Chang

IPC: H01L2100

CPC classification number: H01S5/18311 ,  H01S5/0425 ,  H01S5/18394 ,  H01S5/2081 ,  H01S2301/176

Abstract: A semiconductor light-emitting device having a resonant cavity structure for emitting light perpendicularly to the plane of an active region, and a method of manufacturing the same. A post has a window of an upper electrode and a current aperture of an oxidized layer. Resonated light is emitted through the window and the current aperture. The post is formed by a sidewall of a pre-oxidized layer included in the post is exposed, and the pre-oxidized layer is horizontally oxidized by an oxidizing process by a predetermined distance from the sidewall thereof. An oxidized portion of the pre-oxidized layer becomes a high-resistance portion, and an un-oxidized portion of the pre-oxidized layer becomes the current aperture through which a current or light passes. Since the post is formed by way of self-alignment using the upper electrode and the current aperture is formed by oxidizing the exposed sidewall of the post, the central axis of the window of the upper electrode and the central axis of the current aperture are automatically aligned. Due to the alignment between the window and the current aperture, the electro-optical characteristics of a vertical cavity surface emitting laser (VCSEL) are improved.

Abstract translation: 具有用于垂直于有源区域的平面发射光的谐振腔结构的半导体发光器件及其制造方法。 柱具有上电极的窗口和氧化层的电流孔。 共振光通过窗口和当前光圈发射。 该柱由包含在柱中的预氧化层的侧壁暴露，并且预氧化层通过氧化工艺被水平氧化，距其侧壁预定距离。 预氧化层的氧化部分成为高电阻部分，预氧化层的未氧化部分成为电流或光通过的电流孔径。 由于柱通过使用上电极的自对准形成，并且通过氧化柱的暴露的侧壁形成电流孔，所以上电极的窗口的中心轴线和电流孔的中心轴线自动地 对齐 由于窗口与当前孔径之间的对准，提高了垂直腔面发射激光器（VCSEL）的电光特性。

公开(公告)号：US06954578B2

公开(公告)日：2005-10-11

申请号：US10372191

申请日：2003-02-25

Applicant: Dong-hoon Chang

Inventor： Dong-hoon Chang

IPC: G02B6/36 ,  G02B6/42 ,  G02B6/00

CPC classification number: G02B6/4233 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/4206

Abstract: A substrate for mounting an optical component such that a cylindrical lens can be passively aligned in an exact position, and a method of manufacturing the same are provided. The substrate includes a groove, which is recessed into the substrate to have a slanted sidewall; and a stopper, which is formed on the groove using a photolithographic process such that the stopper is in contact with the optical component mounted in the groove and defines a position of the optical component. The method includes forming a groove having a slanted sidewall by etching a substrate and forming a stopper, which is in contact with an optical component mounted in the groove and defines a position of the optical component, by performing a photolithographic process on the substrate having the groove.

Abstract translation: 一种用于安装光学部件的基板，使得圆柱形透镜可以在精确位置被动对准，并且提供其制造方法。 衬底包括凹槽，凹槽凹入衬底以具有倾斜的侧壁; 以及挡块，其使用光刻工艺形成在凹槽上，使得止动件与安装在凹槽中的光学部件接触并且限定光学部件的位置。 该方法包括通过蚀刻基板形成具有倾斜侧壁的凹槽，并形成一个与安装在凹槽中的光学部件接触并限定光学部件的位置的止动件，通过在具有 槽。

公开(公告)号：US06791152B2

公开(公告)日：2004-09-14

申请号：US09792028

申请日：2001-02-26

Applicant: Woong-lin Hwang ,  Jun-young Kim ,  Dong-hoon Chang

Inventor： Woong-lin Hwang ,  Jun-young Kim ,  Dong-hoon Chang

IPC: H01L310232

CPC classification number: H01L31/105

Abstract: A photodetector device includes a doped semiconductor substrate. A first intrinsic semiconductor material layer, a main reflector, a second intrinsic semiconductor material layer, an upper semiconductor material layer, which is doped the opposite as the substrate, are formed in succession on the semiconductor substrate. An upper electrode is formed on and electrically connected with the upper semiconductor layer, and a lower electrode is electrically connected to the semiconductor substrate. One of the intrinsic semiconductor layers is relatively thin to absorb incident light, while the other is relatively thick. The photodetector device, a p-i-n photodetector, has an I region including the intrinsic semiconductor layers with different thicknesses, and a main reflector therebetween. The thickness of the entire I region can be increased with a reduced transit distance for holes. Thus, low driving voltage and high sensitivity to a high frequency optical signal requirements can be realized without reducing the size of the photo-receiving area.

Abstract translation: 光检测器件包括掺杂半导体衬底。 在半导体衬底上连续形成第一本征半导体材料层，主反射器，第二本征半导体材料层，与衬底相反掺杂的上半导体材料层。 上电极形成在上半导体层上并与上半导体层电连接，下电极与半导体衬底电连接。 本征半导体层之一相对较薄以吸收入射光，而另一个相对较厚。 光检测器器件p-i-n光检测器具有包括不同厚度的本征半导体层的I区域和它们之间的主反射器。 整个I区域的厚度可以随着孔的传输距离减小而增加。 因此，可以实现低驱动电压和对高频光信号要求的高灵敏度，而不减小光接收面积的大小。