公开(公告)号：US09048192B2

公开(公告)日：2015-06-02

申请号：US13493146

申请日：2012-06-11

申请人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

发明人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC分类号： H01L21/00 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

摘要翻译： 形成图案的方法包括在基板上形成掩模图案; 通过深反应离子蚀刻（DRIE）蚀刻衬底并通过使用掩模图案作为蚀刻掩模; 部分地去除所述掩模图案以暴露所述基板的上表面的一部分; 并蚀刻衬底的上表面的暴露部分。 在该方法中，当由DRIE形成图案时，图案的上部不突出或几乎不突出，并且图案的侧壁的扇形光滑，因此可以容易地在保护层的表面上形成共形材料层 模式。

公开(公告)号：US20150262839A1

公开(公告)日：2015-09-17

申请号：US14723652

申请日：2015-05-28

申请人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

发明人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC分类号： H01L21/3213 ,  H01L21/3065

CPC分类号： H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

摘要翻译： 形成图案的方法包括在基板上形成掩模图案; 通过深反应离子蚀刻（DRIE）蚀刻衬底并通过使用掩模图案作为蚀刻掩模; 部分地去除所述掩模图案以暴露所述基板的上表面的一部分; 并蚀刻衬底的上表面的暴露部分。 在该方法中，当由DRIE形成图案时，图案的上部不突出或几乎不突出，并且图案的侧壁的扇形光滑，因此可以容易地在保护层的表面上形成保形材料层 模式。

公开(公告)号：US20160056110A1

公开(公告)日：2016-02-25

申请号：US14929737

申请日：2015-11-02

申请人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

发明人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC分类号： H01L23/528 ,  H01L23/48

CPC分类号： H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

公开(公告)号：US20120322268A1

公开(公告)日：2012-12-20

申请号：US13493146

申请日：2012-06-11

申请人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

发明人： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC分类号： H01L21/302

CPC分类号： H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

摘要翻译： 形成图案的方法包括在基板上形成掩模图案; 通过深反应离子蚀刻（DRIE）蚀刻衬底并通过使用掩模图案作为蚀刻掩模; 部分地去除所述掩模图案以暴露所述基板的上表面的一部分; 并蚀刻衬底的上表面的暴露部分。 在该方法中，当由DRIE形成图案时，图案的上部不突出或几乎不突出，并且图案的侧壁的扇形光滑，因此可以容易地在保护层的表面上形成共形材料层 模式。