公开(公告)号：US20100117141A1

公开(公告)日：2010-05-13

申请号：US12590641

申请日：2009-11-12

申请人： Dong-woon Shin ,  Young-Kun Park ,  Jun-gyu Yang ,  Jae-young Ahn ,  Ki-hyun Hwang ,  Si-young Choi

发明人： Dong-woon Shin ,  Young-Kun Park ,  Jun-gyu Yang ,  Jae-young Ahn ,  Ki-hyun Hwang ,  Si-young Choi

IPC分类号： H01L27/105 ,  H01L29/792

CPC分类号： H01L27/11582 ,  G11C5/02 ,  G11C16/0475 ,  G11C16/0483 ,  H01L27/11568 ,  H01L27/11578 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： In one aspect, a transistor comprises: a substrate body; a tunnel oxide layer on the body; a charge trapping layer on the tunnel oxide layer; a blocking layer on the charge trapping layer; a control gate on the blocking layer, the control gate having first and second sidewalls, the first and second sidewalls being spaced apart from each other by a first distance; and charge confinement features on the body, the charge confinement features being spaced apart from each other by a second distance that is greater than or substantially equal to the first distance, the charge confinement features suppressing or preventing migration of charge present in the charge trapping layer.

摘要翻译： 一方面，晶体管包括：衬底本体; 身体上的隧道氧化层; 隧道氧化层上的电荷捕获层; 电荷俘获层上的阻挡层; 所述阻挡层上的控制栅极，所述控制栅极具有第一和第二侧壁，所述第一和第二侧壁彼此隔开第一距离; 并且在身体上充电限制特征，所述电荷限制特征彼此间隔开大于或基本上等于所述第一距离的第二距离，所述电荷限制特征抑制或防止存在于所述电荷俘获层中的电荷的迁移 。